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Journal ArticleDOI

A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

TLDR
A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented and is demonstrated to have a minimum internal gain of 14.5 dB.
Abstract
A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.

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Citations
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Journal ArticleDOI

Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial

TL;DR: This tutorial catalogues and analyzes previously reported CMOS low noise amplifier (LNA) linearization techniques and highlights the impact of CMOS technology scaling on linearity and outlines how to design a linear LNA in a deep submicrometer process.
Journal ArticleDOI

Digitally Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

TL;DR: A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented and an accurate multiphase clock generator is presented for a mismatch-robust HR.
Journal ArticleDOI

Implications of Passive Mixer Transparency for Impedance Matching and Noise Figure in Passive Mixer-First Receivers

TL;DR: In this paper, a class of passive mixer-first, LNA-less receivers is analyzed in depth, and it is shown that expanding quadrature passive mixers to harmonic rejection mixers allows for even better noise performance and wider matching range.
Journal ArticleDOI

A Low-Power, Linearized, Ultra-Wideband LNA Design Technique

TL;DR: Experimental results show that the linearization technique improves the cascode LNA's IIP3 by a factor of 3.5, and analyzes its performance with Volterra series.
Journal ArticleDOI

A Wideband Inductorless LNA With Local Feedback and Noise Cancelling for Low-Power Low-Voltage Applications

TL;DR: A new approach employing local negative feedback is introduced between the parallel CG and CS stages, leading to an LNA with higher gain and lower noise figure (NF) compared with the conventional CG-CS LNA, particularly under low power and voltage constraints.
References
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Journal ArticleDOI

An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers

TL;DR: An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter using a 0.18-/spl mu/m CMOS process achieves a power gain of 9.3 dB with an input match of -10 dB over the band.
Journal ArticleDOI

All-digital TX frequency synthesizer and discrete-time receiver for Bluetooth radio in 130-nm CMOS

TL;DR: In this paper, the authors present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process, which is compatible with digital deep-submicron CMOS processes and can be readily integrated with a digital baseband and application processor.
Journal ArticleDOI

A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers

TL;DR: An ultra-wideband 3.1-10.6-GHz low-noise amplifier employing a broadband noise-canceling technique is presented, which achieves a power gain of 9.7 dB over a -3 dB bandwidth of 1.2-11.9-GHz and a noise figure of 4.5-5.1 dB in the entire UWB band.
Journal ArticleDOI

Modified derivative superposition method for linearizing FET low noise amplifiers

TL;DR: In this paper, a modified derivative-superposition (DS) method was proposed to increase the maximum IIP3 at RF frequencies, which was used in a 0.25mum Si CMOS low-noise amplifier (LNA) designed for cellular code-division multiple access receivers.
Journal ArticleDOI

Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors

TL;DR: In this article, a high-level linear receiver RF front-end adopting MOSFET transconductance linearization by linearly superposing several common-source FET transistors in parallel (multiple gated transistor, or MGTR), combined with some additional circuit techniques are reported.
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