Journal ArticleDOI
Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic
TLDR
In this article, a doping approach for p-type ZnO is reported which is reproducible and long-time stable for the zinc oxide layers were doped simultaneously with nitrogen and arsenic in metal organic vapor phase epitaxy.Abstract:
A doping approach for p-type ZnO is reported which is reproducible and long-time stable For p-type doping the zinc oxide layers were doped simultaneously with nitrogen and arsenic in metal organic vapor phase epitaxy The conductivity type of the layers was investigated by scanning capacitance microscopy, a technique based on local capacitance-voltage analysis (C-V) with submicron spatial resolution Depending on the growth parameters, largely extended p-type domains were observed, surrounded by n-type regions The differences in local conductivity type are directly correlated to the topography as measured with atomic force microscopy revealing p-type for smooth, two-dimensional surfaces and n-type signals in the case of three-dimensional island growth or structural defects, ie, microcracks or surface pitsread more
Citations
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Transparent conductors as solar energy materials: A panoramic review
TL;DR: Transparent conductors (TCs) have a multitude of applications for solar energy utilization and for energy savings, especially in buildings as discussed by the authors, which leads naturally to considerations of spectral selectivity, angular selectivity, and temporal variability of TCs, as covered in three subsequent sections.
Journal ArticleDOI
ZnO : From basics towards applications
TL;DR: In this article, the authors review the fundamental properties of ZnO and of ZNO-based nanostructures, doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.
Journal ArticleDOI
ZnO: Material, Physics and Applications
TL;DR: This work critically review aspects of the material growth, fundamental properties of ZnO and ZNO-based nanostructures and doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.
Journal ArticleDOI
ZnO as a Functional Material, a Review
TL;DR: In this article, the authors provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.
Journal ArticleDOI
Doping Asymmetry Problem in ZnO: Current Status and Outlook
TL;DR: A critical review of the current experimental efforts focused on achieving p-type ZnO is provided and the proposed approaches which could possibly be used to overcome the p- type problem are discussed.
References
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Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Book
Mos (Metal Oxide Semiconductor) Physics and Technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
MOS /metal oxide semiconductor/ physics and technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.