Journal ArticleDOI
Macromodeling of single-electron transistors for efficient circuit simulation
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In this paper, the possibility of compact modeling in single-electron circuit simulation has been investigated, and it is shown that each Coulomb island in singleelectron circuits can be treated independently when the interconnections between single electron transistors are large enough and a quantitative criterion for this condition is given.Abstract:
In this study, the possibility of compact modeling in single-electron circuit simulation has been investigated. It is found that each Coulomb island in single-electron circuits can be treated independently when the interconnections between single-electron transistors are large enough and a quantitative criterion for this condition is given. It is also demonstrated that, in those situations, SPICE macromodeling of single-electron transistors can be used for efficient circuit simulation. The developed macromodel produces simulation results with reasonable accuracy and with orders of magnitude less CPU time than usual Monte Carlo simulations.read more
Citations
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Journal ArticleDOI
Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design
TL;DR: In this paper, a physically based analytical single electron transistor (SET) model is proposed for hybrid CMOS-SET analog circuit simulation, and the model parameters are physical device parameters and an associated parameter extraction procedure is reported.
Journal ArticleDOI
A compact analytical model for asymmetric single-electron tunneling transistors
Hiroshi Inokawa,Yasuo Takahashi +1 more
TL;DR: In this paper, an analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed.
Proceedings ArticleDOI
Few electron devices: towards hybrid CMOS-SET integrated circuits
TL;DR: It is shown that combination of CMOS and SET in hybrid ICs appears to be attractive in terms of new functionality and performance, together with better integrability for ULSI, especially because of their complementary characteristics.
Journal ArticleDOI
A quasi-analytical SET model for few electron circuit simulation
TL;DR: In this article, a quasi-analytical model for single electron transistors (SETS) is proposed and validated by comparison with Monte-Carlo (MC) simulations in terms of drain current and transconductance.
Journal ArticleDOI
CAD for nanometer silicon design challenges and success
TL;DR: Most nanometer design issues are described and the issues related to the higher level of abstraction are summarized and technology CAD for future nanometer devices is presented.
References
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Journal ArticleDOI
Overview of nanoelectronic devices
TL;DR: An overview of research developments toward nanometer-scale electronic switching devices for use in building ultra-densely integrated electronic computers and two classes of alternatives to the field-effect transistor are considered: quantum-effect and single-electron solid-state devices and molecular electronic devices.
Journal ArticleDOI
Single‐electron transistor logic
TL;DR: In this paper, the authors present the results of numerical simulations of a functionally complete set of complementary logic circuits based on capacitively coupled single-electron transistors (CSETs).
Journal ArticleDOI
Possible performance of capacitively coupled single‐electron transistors in digital circuits
TL;DR: In this paper, a theoretical analysis of the possible performance of single-electron transistors with capacitive coupling in simple logic and memory circuits was carried out, with a detailed account of parasitic factors including thermal fluctuations and background charge variations, showing that at optimal values of the parameters including the background charge, the maximum operation temperature is close to 0.025e2/CkB, where C is the capacitance of the smallest tunnel junction.
Journal ArticleDOI
Single electron tunneling rates in multijunction circuits
Hermann Grabert,Gert-Ludwig Ingold,Michel Devoret,Daniel Esteve,Hugues Pothier,Cristian Urbina +5 more
TL;DR: In this paper, the Coulomb blockade of electron tunneling at low temperatures is shown to be strongly affected by the external electrical circuit, and the range of validity of the local rule and global rule rates is clarified.
Journal ArticleDOI
A single-electron device and circuit simulator
Christoph Wasshuber,Hans Kosina +1 more
TL;DR: SIMON as mentioned in this paper is a single-electron device and circuit simulator, with the following features: tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single electron device or circuit.