scispace - formally typeset
Journal ArticleDOI

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors

Reads0
Chats0
TLDR
In this article, three high-purity oxygen precursors, i.e. iso-propanol, acetone, and N 2 O, were tested for the growth of ZnO on GaN/Si(1 1 1) templates.
About
This article is published in Journal of Crystal Growth.The article was published on 2003-02-01. It has received 47 citations till now. The article focuses on the topics: Metalorganic vapour phase epitaxy & Thin film.

read more

Citations
More filters
Journal ArticleDOI

A comprehensive review of zno materials and devices

TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI

Epitaxial growth of ZnO films

TL;DR: In this article, the authors review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc.
Journal ArticleDOI

ZnO thin films and light-emitting diodes

TL;DR: In this article, the authors review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of znO light-emitting diodes.
Journal ArticleDOI

Periconium sp. (endophytic fungi) extract mediated sol-gel synthesis of ZnO nanoparticles for antimicrobial and antioxidant applications

TL;DR: In this article, the Periconium sp. extract mediated sol-gel process was effectively utilized for the synthesis of ZnO nanoparticles and the aqueous fungal extract acted as chelating agent for the Zn2+ ions and lead to the formation of gel.
References
More filters
Journal ArticleDOI

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

TL;DR: In this paper, high-resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface and lattice matched epitaxy.
Journal ArticleDOI

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

TL;DR: In this article, a method for the elimination of cracks in GaN layers grown on Si (111) was presented, where thin, low-temperature AlN interlayers were introduced to reduce the crack density of the GaN layer.
Journal ArticleDOI

Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition

TL;DR: In this article, the reaction of diethylzinc with,, and oxidizing gas systems, has been studied using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.
Journal ArticleDOI

Transparent and conductive Ga-doped ZnO films grown by low pressure metal organic chemical vapor deposition

TL;DR: In this paper, high transparent conductive Ga-doped zinc oxide (ZnO:Ga) has been deposited on 3 in.×4 in. Corning 7059 glass and other substrates using a high speed rotating disk reactor low pressure metal organic chemical vapor deposition system.
Related Papers (5)