Journal ArticleDOI
Mobility Behavior of Ge1-xSnxLayers Grown on Silicon-on-Insulator Substrates
Reads0
Chats0
TLDR
In this paper, the authors investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates.Abstract:
We have investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates. Hall measurement revealed the conduction of holes excited from acceptor levels related to vacancy defects whose concentration was as high as 1018 cm-3 in Ge1-xSnx layers. The temperature dependences of the carrier mobility and concentration in the valence band was estimated by reducing the parallel conduction component in the impurity band. The incorporation of Sn at a content lower than 4.0% hardly degraded the hole mobility of heteroepitaxial Ge1-xSnx layers. In contrast, the mobility of the Ge1-xSnx layers was improved by reducing the carrier concentration of the Ge1-xSnx layers by Sn incorporation compared with that of the Ge layer formed under the same growth and annealing conditions. This result suggests that the incorporation of Sn into Ge leads to reducing the hole concentration of the electrically active vacancy defects due to the formation of Sn-vacancy pairs.read more
Citations
More filters
Journal ArticleDOI
Optically Pumped GeSn Microdisk Lasers on Si
Daniela Stange,Stephan Wirths,R. Geiger,C. Schulte-Braucks,Bahareh Marzban,Nils von den Driesch,Gregor Mussler,T. Zabel,Toma Stoica,J. M. Hartmann,Siegfried Mantl,Zoran Ikonic,Detlev Grützmacher,Hans Sigg,Jeremy Witzens,Dan Buca +15 more
TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.
Journal ArticleDOI
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Benjamin Vincent,Federica Gencarelli,Hugo Bender,Clement Merckling,Bastien Douhard,Dirch Hjorth Petersen,Ole Hansen,Henrik Hartmann Henrichsen,Johan Meersschaut,Wilfried Vandervorst,Marc Heyns,Roger Loo,Matty Caymax +12 more
TL;DR: In this paper, an atmospheric pressure-chemical vapor deposition technique was proposed to grow metastable GeSn epitaxial layers on Ge substrates with Sn contents up to 8% and those metastable layers stay fully strained after 30min anneal in N2 at 500°C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature.
Journal ArticleDOI
Growth and applications of GeSn-related group-IV semiconductor materials
Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita +5 more
TL;DR: In this paper, a review of the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics is presented.
Journal ArticleDOI
Group IV direct band gap photonics: Methods, Challenges and Opportunities
R. Geiger,T. Zabel,Hans Sigg +2 more
TL;DR: The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: the idea is to integrate fully compatible group IV material with equally favorable optical properties as the chemically incompatible group III-V-based systems.
Journal ArticleDOI
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.
Michael Oehme,Konrad Kostecki,Kaiheng Ye,Stefan Bechler,Kai Ulbricht,M. Schmid,Mathias Kaschel,Martin Gollhofer,Roman Körner,Wogong Zhang,Erich Kasper,Jörg Schulze +11 more
TL;DR: All detectors had bandwidth above 40 GHz at enough reverse voltage which increased from zero to -5 V within the given Sn range and caused the depletion of the nominal intrinsic absorber at increasing reverse voltages.
References
More filters
Book
Semiconductor Devices: Physics and Technology
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
High-mobility Si and Ge structures
TL;DR: In this article, the structural and electronic properties of lattice-mismatched Si/SiGe heterostructures are discussed in terms of scattering mechanisms and experimental results, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.
Journal ArticleDOI
Impurity Band Conduction in Germanium and Silicon
TL;DR: In this paper, it is shown that the sign reversal of thermoelectric power observed for the impurity band does not imply a change in the sign of the effective mass.
Journal ArticleDOI
Possibility of increased mobility in Ge-Sn alloy system
Jay Deep Sau,Marvin L. Cohen +1 more
TL;DR: In this article, the effect of strain and alloying with Sn on the band structure of Ge using a combination of ab initio and empirical pseudopotential techniques was studied, where the dependence of the mobility on strain and Alloying Sn was used to determine the phonon and alloy scattering contributions to the mobility.