Proceedings ArticleDOI
NanoCMOS devices at the end and beyond the roadmap
Simon Deleonibus,B. de Salvo,L. Clavelier,Thomas Ernst,O. Faynot,Thierry Poiroux,M. Vinet +6 more
- pp 13-33
TLDR
In this article, the authors reviewed the alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering.Abstract:
Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50 nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials (Ge, diamond/graphite carbon, HiK,...), Si based CMOS will be scaled beyond the ITRS as the future system-on-chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, wi ll bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance w ll be the major challenges in the future.read more
Citations
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Journal ArticleDOI
Synthesis and characterization of Tm2O3-doped Lu2O3 nanoparticle suitable for fabrication of thulium-doped laser fiber
TL;DR: In this article, the synthesis of Tm2O3-doped Lu 2O3 nanoparticle using homogeneous co-precipitation method along with its material/optical characterization is reported.
Proceedings ArticleDOI
Microelectronics advancements to support new modulation formats and DSP techniques
TL;DR: In this article, high-speed ADC/DAC and DSP techniques are discussed for implementations at 40Gb/s and beyond for QPSK modulation formats on fiber such as QPSk.
Patent
Transistors with improved thermal conductivity
Yong Ju Lee,Yang Du +1 more
TL;DR: Transistors with improved thermal conductivity are disclosed in this paper, where portions of the transistor or elements adjacent to the transistor are made from materials that are electrically insulative, but have high thermal conductivities.
Journal ArticleDOI
Numerical method for a 2D drift diffusion model arising in strained n-type MOSFET device
TL;DR: In this paper, the authors reported the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel.
References
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Journal ArticleDOI
A silicon nanocrystals based memory
Sandip Tiwari,Farhan Rana,Hussein I. Hanafi,Allan M. Hartstein,Emmanuel F. Crabbé,Kevin K. Chan +5 more
TL;DR: In this paper, a new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) was described, which utilizes direct tunneling and storage of electrons in the nanocrystal.
Journal ArticleDOI
Multiple-gate SOI MOSFETs
TL;DR: In this paper, the authors describe the evolution and properties of a new class of MOSFETs, called triple-plus (3 + )-gate devices, which offer a practical solution to the problem of the ultimate, yet manufacturable, silicon MOS-FET.
Journal ArticleDOI
Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Journal ArticleDOI
Scaling theory for double-gate SOI MOSFET's
TL;DR: In this paper, a scaling theory for double-gate SOI MOSFETs is presented, which gives guidance for device design that maintains a sub-threshold factor for a given gate length.