Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Medical device applications of nanostructured surfaces
TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Patent
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 more
TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Patent
Nanostructure-Enhanced Platelet Binding and Hemostatic Structures
TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Patent
Large-area nanoenabled macroelectronic substrates and uses therefor
Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 more
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
References
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Patent
Molecular wire transistor (MWT)
TL;DR: In this paper, bipolar and field effect molecular wire transistors are provided, where a pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being providing with Lewis base functional groups.
Patent
Silicon based nanospheres and nanowires
TL;DR: In this paper, a nanowire, nanosphere, metallized nanosphere and methods for their fabrication are outlined, which includes fabrication under thermal and non-catalytic conditions.
Patent
Method of encapsulating a material in a carbon nanotube
TL;DR: In this article, a method of encapsulating a material in a carbon nanotube comprising generating a vapor of the material to be encapsulated, generating a hydrogen arc discharge that discharges encapsulating products, and contacting the vapor of material and the products discharged from the hydrogen arc discharging proximate a surface to encapsulate the material in the tube is presented.
Patent
Controllable ion-exchange membranes
TL;DR: In this paper, multilayered porous materials are formed by coating a porous substrate with a metal and adsorbing an organic layer comprising a recognition moiety onto the metal film.
Patent
Band-structure modulation of nano-structures in an electric field
TL;DR: In this article, a method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed, which can be used in applications such as switches, transistors, photodetectors and polaron generation.