Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
Medical device applications of nanostructured surfaces
TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Patent
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 more
TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Patent
Nanostructure-Enhanced Platelet Binding and Hemostatic Structures
TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Patent
Large-area nanoenabled macroelectronic substrates and uses therefor
Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 more
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
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Journal ArticleDOI
Directed Assembly of One-Dimensional Nanostructures into Functional Networks
TL;DR: It is shown that nanowires can be assembled into parallel arrays with control of the average separation and, by combining fluidic alignment with surface-patterning techniques, that it is also possible to control periodicity.
Journal ArticleDOI
Optical gain in silicon nanocrystals
TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Journal ArticleDOI
Logic gates and computation from assembled nanowire building blocks.
TL;DR: It is shown that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode.
Journal ArticleDOI
Epitaxial core–shell and core–multishell nanowire heterostructures
TL;DR: The synthesis of core–multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.
Journal ArticleDOI
Carbon nanotube-based nonvolatile random access memory for molecular computing
TL;DR: A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed and the viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.