scispace - formally typeset
Patent

Nanoscale wires and related devices

Reads0
Chats0
TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
Citations
More filters
Patent

Medical device applications of nanostructured surfaces

TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Patent

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Patent

Nanostructure-Enhanced Platelet Binding and Hemostatic Structures

TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Patent

Large-area nanoenabled macroelectronic substrates and uses therefor

TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
References
More filters
Journal ArticleDOI

Directed Assembly of One-Dimensional Nanostructures into Functional Networks

TL;DR: It is shown that nanowires can be assembled into parallel arrays with control of the average separation and, by combining fluidic alignment with surface-patterning techniques, that it is also possible to control periodicity.
Journal ArticleDOI

Optical gain in silicon nanocrystals

TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Journal ArticleDOI

Logic gates and computation from assembled nanowire building blocks.

TL;DR: It is shown that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode.
Journal ArticleDOI

Epitaxial core–shell and core–multishell nanowire heterostructures

TL;DR: The synthesis of core–multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.
Journal ArticleDOI

Carbon nanotube-based nonvolatile random access memory for molecular computing

TL;DR: A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed and the viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.
Related Papers (5)