Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
Method for making a semiconductor device including a front side strained superlattice layer and a back side stress layer
TL;DR: In this paper, a method for making a semiconductor device may include forming a stress layer on a back surface of a substrate and forming a strained superlattice layer adjacent a front surface of the semiconductor substrate.
Patent
Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices
TL;DR: In this article, a gate contact is positioned along at least a portion of a length of the at least one nanowire, and a dielectric material layer is between the gate contact and the source contact.
Patent
Vertically-stacked electronic devices having conductive carbon films
TL;DR: In this article, a crossbar array of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes is described, and uses of the arrays as two-terminal memory devices, logic units, and sensors are disclosed.
Patent
Nanowire tunnel field effect transistors
TL;DR: In this paper, a nanowire tunnel field effect transistor (FET) is described, where the silicon portion is surrounded by a gate structure disposed circumferentially around the silicon part, a drain region including an doped silicon portion extending from the first distal end, a portion of the doped polysilicon portion arranged in the channel region, a cavity defined by the second distal-end of the silicon component and an inner diameter of the gate structure, and a source region including a doped epi-silicon component epitaxially extending from a
Patent
Fabrication of nanowires
TL;DR: In this paper, a system and method for creating nanowires is described, where a nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate.
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.