Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
Device containing non-blinking quantum dots
Keith Brain Kahen,Xiaofan Ren +1 more
TL;DR: In this article, an optoelectronic device including two spaced apart electrodes and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternarily semiconductor cores containing a gradient in alloy composition is presented.
Patent
Lattice-mismatched semiconductor structures and related methods for device fabrication
TL;DR: In this paper, lattice-mismatched materials having configurations that trap defects within sidewall-containing structures are discussed. But the authors do not discuss how to detect defects in these materials.
Patent
Ammonia nanosensors, and environmental control system
Mikhail Briman,Craig Bryant,Ying-Lan Chang,Jean-Christophe P. Gabriel,Shripal Gandhi,Bradley N. Johnson,Willem-Jan Ouborg,John Loren Passmore,Kastooriranganathan Ramakrishnan,Sergei Skarupo,Alexander Star,Christian Valcke +11 more
TL;DR: In this paper, the authors describe a personnel safety system configured as a disposable badge employing nanoelectronic sensors and a method of dynamic sampling and exposure of a sensor providing a number of operational advantages.
Patent
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures
Zhiyuan Cheng,Calvin Sheen +1 more
TL;DR: In this article, a tunneling device is constructed over first and second lattice mismatched semiconductor materials, which is then disposed over the lattice-mismatched materials.
Patent
Solutions integrated circuit integration of alternative active area materials
TL;DR: In this paper, a method of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby, is described, which are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.