Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
Apparatuses including memory devices and related electronic systems
Jun Liu,Michael P. Violette +1 more
TL;DR: Memory devices having variable resistance material include an electrode comprising a single nanowire as mentioned in this paper, and such methods may comprise establishing contact between one end of a single wire and a volume of variable resistance materials in a memory cell.
Patent
Self-excitation single-electron spinning electromagnetic transistor and fabrication process thereof
Zhang Hongtao,Fan Li,Zhang Zesen +2 more
TL;DR: In this article, a self-excitation single-electron spinning electromagnetic transistor and a fabrication process of the transistor are described, and the transistor comprises a substrate, wherein a nanometer silicon carbide thin film structure, a source, a drain, and a gate are arranged on the substrate, and two ends of the thin film are in contact with the source and drain to form a source-drain active region.
Patent
Quantum well graphene structure formed on a dielectric layer having a flat surface
TL;DR: In this paper, the authors proposed an interracial layer constructed of a thin, non-polar, dielectric material to minimize charge carrier scattering in the graphene layer through remote interfacial phonons.
Patent
Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer
TL;DR: In this article, a light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III -nitride pyramidal shell layer located on each of the plurality of group III-flat-nodes, and a continuous Group-III-nitric contact layer located over the continuous GroupIII-flatnodes.
Patent
Tunable Hot-Electron Transfer Within a Nanostructure
TL;DR: In this article, a large tunability of the voltage onset of negative differential resistance and of voltage-current phase is modulated by modulating electrostatic gating, incident photon energy, and the incident photon intensity.
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.