Nanoscale wires and related devices

In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract:

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Citations

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Medical device applications of nanostructured surfaces

Robert S. Dubrow,Lawrence Bock,R. Hugh Daniels,Veeral Hardev,Chunming Niu,Vijendra Sahi +5 moreNanosys

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TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.

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Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 moreUniversity of California

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TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.

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Large-area nanoenabled macroelectronic substrates and uses therefor

Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 moreNanosys

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Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Charles M. Lieber,Ying Cui,Xiangfeng Duan,Yung-Sheng Huang +3 moreHarvard University

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TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.

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References

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Covalent carbon nitride material comprising C2 N and formation method

Charles M. Lieber,Z. John Zhang,Chunming Niu +2 moreHarvard University

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TL;DR: In this paper, a method of forming a covalent carbon material includes forming an atomic nitrogen source, forming an elemental reagent source and combining the atomic nitrogen, elemental reagents to form the C 2 N and annealing it.

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The use of 1d semiconductor materials as chemical sensing materials, produced and operated close to room temperature

Isabelle Besnard,Tobias Vossmeyer,Akio Yasuda,Marko Burghard,Ulrich Schlecht +4 more

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TL;DR: In this article, a chemical sensor device consisting of a substrate, a sensor medium formed on the substrate, and the sensor medium comprising one-dimensional nanoparticles, wherein the one dimensional nanoparticles essentially consist of a semiconducting AxBy compound, e.g. V2O5, is presented.

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Noncovalent sidewall functionalization of carbon nanotubes

Hongjie Dai,Robert J. Chen +1 moreStanford University

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TL;DR: In this paper, single-wall carbon nanotubes (SWNTs) are noncovalently functionalized in a broadly applicable manner, being useful for a variety of implementations, including for the immobilization of molecules, for circuit arrangements, molecular electronics and for molecular sensors.

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Print media vacuum holddown

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TL;DR: In this paper, a vacuum holddown for sheet materials has a surface having a field of vacuum ports in which each individual port is gated, and when a vacuum is applied to the underside of the holddown, the gates close.

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Method of manufacturing a semiconductor device

Kodera Masako,Matsui Yoshitaka +1 moreToshiba

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TL;DR: In this article, a method of manufacturing a semiconductor device, comprising preparing a base comprising a substrate having a device surface side, a p-type semiconductor layer formed on the device surface of the semiconductor substrate, and wirings formed above the substrate and electrically connected to each other via the p-n junction, is presented.

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