Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
FINFET Including a Superlattice
TL;DR: A semiconductor device may include at least one fin field effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin this paper.
Patent
Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
TL;DR: In this article, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed.
Patent
Semiconductor device with a vertical MOSFET including a superlattice and related methods
TL;DR: In this article, a semiconductor device includes at least one vertical MOSFET (20) on a substrate, and a gate (35, 36, 37) laterally adjacent to the superlattice, and regions (23, 22, 26) vertically above and below the super-layer and cooperating with the gate for causing transport of charge carriers through the superlayer in the vertical direction.
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Photovoltaics on silicon
TL;DR: In this paper, a photovoltaic cell is disposed above a non-crystalline mask layer over a substrate, and the mask is replaced by a polysilicon mask layer.
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Accumulation field effect microelectronic device and process for the formation thereof
TL;DR: In this article, a gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration.
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.