Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Patent
Solar cell and method of fabricating the same
TL;DR: In this article, a solar cell is constructed from a substrate, a back electrode, a window layer, a light absorbing layer, and a plurality of beads in the light absorbing layers.
Patent
Conductive thermoplastic compositions, methods of manufacture and articles derived from such compositions
Mark Elkovitch,Soumyadeb Ghosh,Nitin nd Floor Naidu Apt Mutha,Srinivasan Rajagopalan,Sai-Pei Ting +4 more
TL;DR: In this paper, an electrically conductive precursor composition comprising an organic polymer precursor, a single wall nanotube composition, and an optional nanosized conductive filler is presented.
Patent
Gate-All-Around Nanowire Tunnel Field Effect Transistors
TL;DR: In this paper, a method for forming a nanowire tunnel field effect transistor (FET) device is described, where the nanowires are suspended by first and second pad regions over a semiconductor substrate.
Patent
Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
TL;DR: In this article, a method for making a semiconductor device may include forming a plurality of shallow trench isolation (STI) regions in the semiconductor substrate, and a number of layers may be deposited over the substrate to define respective superlattices over the STI regions.
Patent
Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
Jun Liu,Michael P. Violette +1 more
TL;DR: Memory devices having variable resistance material include an electrode comprising a single nanowire as mentioned in this paper, and such methods may comprise establishing contact between one end of a single wire and a volume of variable resistance materials in a memory cell.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.