Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Medical device applications of nanostructured surfaces
TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Patent
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 more
TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Patent
Nanostructure-Enhanced Platelet Binding and Hemostatic Structures
TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Patent
Large-area nanoenabled macroelectronic substrates and uses therefor
Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 more
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
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Patent
Large-area nanoenabled macroelectronic substrates and uses therefor
Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 more
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent
Nanostructure and nanocomposite based compositions and photovoltaic devices
Erik C. Scher,Mihai Buretea,Calvin Y. H. Chow,Stephen Empedocles,Andreas Meisel,J. Wallace Parce +5 more
TL;DR: In this article, Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer, where the nanostructures are not necessarily part of a nanocomposition.
Patent
Magnetic memory array using magnetic tunnel junction devices in the memory cells
TL;DR: In this article, a nonvolatile magnetic random access memory (MRAM) is proposed, where each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series.
Patent
Molecular wire crossbar memory
TL;DR: In this article, a molecular wire crossbar memory (MWCM) system is provided. The MWCM comprises a two-dimensional array of a plurality of nanometer-scale devices, each device comprising a junction formed by a pair of crossed wires where one wire crosses another and at least one connector species connecting the pair of wires in the junction.
Patent
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.