Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
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TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
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Medical device applications of nanostructured surfaces
TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Patent
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 more
TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Patent
Nanostructure-Enhanced Platelet Binding and Hemostatic Structures
TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Patent
Large-area nanoenabled macroelectronic substrates and uses therefor
Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David P. Stumbo,J. Wallace Parce,Jay L. Goldman +9 more
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Patent
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
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Methods, devices and compositions for depositing and orienting nanostructures
TL;DR: In this paper, the authors present methods and systems for depositing nanomaterials onto a receiving substrate and optionally depositing those materials in a desired orientation, that comprise providing nanomarticles on a transfer substrate and contacting the nanommaterials with an adherent material disposed upon a surface or portions of a surface of a receiving surface.
Patent
Air and water purification using continuous breakpoint halogenation and peroxygenation
TL;DR: In this article, a process for optimizing the rate of oxidation using a combination of halogen, eg chlorine donors and peroxygen, eg potassium monopersulfate, was proposed.
Patent
Semiconductor nanocrystal display materials and display apparatus employing same
TL;DR: In this article, a field effect flat panel display is described that employs the nanocrystals of this invention, as are embodiments of plasma displays and fluorescent light sources, as well as other flat panel displays.
Patent
Direct growth of nanotubes, and their use in nanotweezers
TL;DR: In this paper, a method of producing carbon single wall nanotubes (SWNTs) by CVD is disclosed, where SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM).
Journal ArticleDOI
Polarization dependence of light emitted from GaAs p‐n junctions in quantum wire crystals
TL;DR: In this paper, the photoluminescence measurement showed that nanowiskers with p-n junctions have the same confinement effect as one-dimensional quantum wires, the average effective width of which is about 30 nm.