Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
Reads0
Chats0
TLDR
In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Citations
More filters
Patent
Micro photoluminescence imaging
Zoltan Kiss,Laszlo Dudas,Zsolt Kovacs,Imre Lajtos,Gyorgy Nadudvari,Nicolas Laurent,Lubomir L. Jastrzebski +6 more
TL;DR: In this paper, a method was proposed to detect photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of wafer.
Patent
Integrated circuit nanowires
TL;DR: In this paper, the authors described the implementation of encapsulated nanowires by patterning a surface layer to form nanometer-sized features, disposing conductive material in the features, removing the surface layer and diposing insulating material on the wires.
Patent
Method of making a heteroepitaxial layer on a seed area
Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
Patent
Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries
Zhu Yimin,Pluvinage Vincent +1 more
TL;DR: In this article, an inventive tumbler reactor and chemical vapor deposition (CVD) system and method for growing silicon nanowires on carbon based powders in scaled up quantities to provide production scale anodes for the battery industry are described.
Patent
Micro photoluminescence imaging with optical filtering
TL;DR: In this article, a method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer, filtering photoluminous emitted from a portion of the Wafer in response to the illumination, and directing the filtered photolumninescence onto a detector to image the portion of wafer on the detector with a spatial resolution of 1 μm×1 μm or smaller.
References
More filters
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Nanotube molecular wires as chemical sensors
Jing Kong,Nathan R. Franklin,Chongwu Zhou,Michael Chapline,Shu Peng,Kyeongjae Cho,Hongjie Dai +6 more
TL;DR: The nanotubes sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature and the mechanisms of molecular sensing with nanotube molecular wires are investigated.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.