Journal ArticleDOI
Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers
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TLDR
Controlled gold nanoparticle (AuNP)-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers.Abstract:
Controlled gold nanoparticle (AuNP)-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers. The memory device had the following configuration: n+Si gate/SiO2 blocking oxide/polyelectrolytes/AuNP/PMMA tunneling dielectric layer/Au source-drain. According to the programming/erasing operations, the memory device showed good programmable memory characteristics with a large memory window. In addition, good reliability was confirmed by the data retention characteristics. The fabrication procedures for the charge trapping and tunneling layers were based on simple solution processes (by dipping and spin-coating) and the maximum processing temperature was <100 °C, so this method has potential applications in plastic/flexible electronics.read more
Citations
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Journal ArticleDOI
Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
Journal ArticleDOI
Towards the development of flexible non-volatile memories.
TL;DR: The flash memories, resistive random access memories and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device.
Journal ArticleDOI
Flexible organic transistor memory devices.
Soo-Jin Kim,Jang-Sik Lee +1 more
TL;DR: The flexible nonvolatile organic memory devices developed on the plastic substrates based on the organic thin-film transistors embedding self-assembled gold nanoparticles exhibited good programmable memory characteristics with respect to the program/erase operations, resulting in controllable and reliable threshold voltage shifts.
Journal ArticleDOI
Microcontact Printing of Ultrahigh Density Gold Nanoparticle Monolayer for Flexible Flash Memories
TL;DR: A uniform monolayer of alkanethiol-protected gold nanoparticle arrays with ultrahigh density have been used as microcontact-printable charge-trapping layers for the application in flexible flash memories and show a large memory window, long retention times and good endurance properties.
Journal ArticleDOI
Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices
TL;DR: In this paper, a molecular nano-floating gate (NFG) of pentacene-based transistor memory devices is developed using conjugated polymer nanoparticles (CPN) as the discrete trapping sites embedded in an insulating polymer, poly (methacrylic acid) (PMAA).
References
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Journal ArticleDOI
The path to ubiquitous and low-cost organic electronic appliances on plastic
TL;DR: The future holds even greater promise for this technology, with an entirely new generation of ultralow-cost, lightweight and even flexible electronic devices in the offing, which will perform functions traditionally accomplished using much more expensive components based on conventional semiconductor materials such as silicon.
Journal ArticleDOI
Device Physics of Solution‐Processed Organic Field‐Effect Transistors
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Journal ArticleDOI
Nonvolatile memory elements based on organic materials
J. C. Scott,L. D. Bozano +1 more
TL;DR: In this article, a review of the materials used in switching devices is presented, focusing particularly on the role of filamentary conduction and deliberately introduced or accidental nanoparticles, and the reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.
Journal ArticleDOI
Programmable polymer thin film and non-volatile memory device.
TL;DR: A novel organic memory device fabricated by solution processing that displays an abrupt transition to a high-conductivity state under an external bias of 2.8 V and is non-volatile, indicating that the device may be used for low-cost, high-density memory storage.
Journal ArticleDOI
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
TL;DR: In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.