Journal ArticleDOI
Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory
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TLDR
The characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory have been investigated numerically considering mainly hole-tunneling process and the present structure shows that the holes have a longer retention time.About:
This article is published in Microelectronics Journal.The article was published on 2003-01-01. It has received 13 citations till now. The article focuses on the topics: Band offset & Nanocrystal.read more
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Journal ArticleDOI
Developments in nanocrystal memory
TL;DR: In this article, the current status of research in nanocrystal memory and its materials, fabrication, structures, and treatment methods are reviewed and an in-depth perspective of state-of-the-art nanocrystals memory is provided.
Journal ArticleDOI
Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements
B. H. Koh,E. W. H. Kan,Wai Kin Chim,Wee Kiong Choi,Dimitri A. Antoniadis,Eugene A. Fitzgerald +5 more
TL;DR: In this paper, the trap energy level requirement for achieving a specified long-term charge retention performance (i.e., 10-yr retention time) was obtained from simulation as a function of the nanocrystal size.
Journal ArticleDOI
Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals
TL;DR: In this paper, the effect of the Ge core size on the confinement energies, barrier heights, and hole lifetimes in spherical Ge/Si core-shell nanocrystals was studied using an atomistic, tight-binding model with an sp3 d5 s* basis including spin-orbit coupling.
Journal ArticleDOI
Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xSix/Si heteronanocrystals
TL;DR: In this paper, the charge storage characteristics in the metal-oxide-semiconductor memory structure based on gradual Ge1−x6∕Si heteronanocrystals (HNCs) were investigated by using capacitance-voltage measurements.
Journal ArticleDOI
Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
Shih-Cheng Chen,Ting-Chang Chang,Wei Ren Chen,Yuan-Chun Lo,Kai-Ting Wu,S. M. Sze,Jason Chen,I. H. Liao,F. S. Yeh +8 more
TL;DR: In this paper, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance, in charge storage.
References
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Journal ArticleDOI
A silicon nanocrystals based memory
Sandip Tiwari,Farhan Rana,Hussein I. Hanafi,Allan M. Hartstein,Emmanuel F. Crabbé,Kevin K. Chan +5 more
TL;DR: In this paper, a new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) was described, which utilizes direct tunneling and storage of electrons in the nanocrystal.
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Room-temperature single-electron memory
TL;DR: In this article, the authors presented room-temperature operation for the first time of single-electron memory, in which one electron represents one bit of information, made possible by their new one-transistor memory configuration which has a very high charge sensitivity (conventionally, three circuit elements are needed).
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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals
TL;DR: In this paper, the authors investigated charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals, where various interface traps and defects were introduced by thermal annealing treatment.
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Tunneling from a many-particle point of view
TL;DR: In this paper, the Hamiltonian for a system of interacting electrons in the presence of a barrier is transformed into one which can be separated into three parts: two of the parts describe the electrons on the right and left sides of the barrier, while the third is a transition term which allows tunneling through the barrier.