Proceedings ArticleDOI
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Erdin Ture,Peter Brückner,Friedbert van Raay,Rudiger Quay,Oliver Ambacher,Mohamed Alsharef,Ralf Granzner,Frank Schwierz +7 more
- pp 97-100
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TLDR
In this article, a detailed RF investigation on intrinsic device parameters is performed under different biasing schemes and the derived small-signal parameters of the measured devices are extracted by employing 3-D EM FET model analysis at 110 GHz.Abstract:
AlGaN/GaN high-electron mobility transistors (HEMTs) with varied Tri-gate topologies have been fabricated and influences of the fin-shaped nano-channels on device parasitics are examined. Through S-parameter measurements and modelling of the designed Fin-FETs, a detailed RF investigation on intrinsic device parameters is performed under different biasing schemes. Corresponding RF performances and transfer characteristics as well as the derived small-signal parameters of the measured devices are extracted by employing 3-D EM FET model analysis at 110 GHz. Comparisons between the designed fin-geometries and intrinsic device parameters have proven flatter gm, gds and fT responses, which are presented through experimental results in detail for the first time.read more
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Journal ArticleDOI
GaN FinFETs and trigate devices for power and RF applications: review and perspective
TL;DR: In this article, the authors present a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provide in-depth analyses correlating device design parameters to device performance space.
Journal ArticleDOI
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
Erdin Ture,Peter Brückner,Birte-Julia Godejohann,Rolf Aidam,Mohamed Alsharef,Ralf Granzner,Frank Schwierz,Rudiger Quay,Oliver Ambacher +8 more
TL;DR: In this paper, a lattice-matched InAlGaN barrier with the help of the fin-shaped nano-channels provided improved gate control, increasing current densities, and transconductance.
Journal ArticleDOI
RF Performance of Trigate GaN HEMTs
Mohamed Alsharef,Max Christiansen,Ralf Granzner,Erdin Ture,Ridiger Quay,Oliver Ambacher,Frank Schwierz +6 more
TL;DR: In this paper, the impact of the trigate GaN high electron mobility transistor (HEMT) body geometry on the device RF performance is investigated by 3-D numerical simulations, and the effect of gate length scaling on the RF behavior is studied and guidelines for design improvements are provided.
Journal ArticleDOI
Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs
Hengshuang Zhang,Xiaohua Ma,Meng Zhang,Yang Lu,Qing Zhu,Ziyue Zhao,Chupeng Yi,Lin-An Yang,Peijun Ma,Yue Hao +9 more
TL;DR: In this article, a detailed RF investigation on small-signal model parameters is performed under different biasing conditions, and the influence of different fin structures on model parameters and linearity improvement is examined.
Journal ArticleDOI
Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs
Ching-Ting Lee,Hung-Yin Juo +1 more
TL;DR: In this article, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photo electrochemical etching method, and the He-Cd laser interference photolithography method.
References
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Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Yuanzheng Yue,Zongyang Hu,Jia Guo,Berardi Sensale-Rodriguez,Guowang Li,Ronghua Wang,Faiza Afroz Faria,Tian Fang,Bo Song,Xiang Gao,Shiping Guo,T. Kosel,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +15 more
TL;DR: In this paper, the authors reported 30-nm-gate-length InAlN/Aln/GaN/SiC high-electron-mobility transistors with a record current gain cutoff frequency (fT) of 370 GHz.
Journal ArticleDOI
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
TL;DR: In this paper, high performance AlGaN/GaN high electron mobility transistors (HEMTs) with 0.12 /spl mu/m gate-length have been fabricated on an insulating SiC substrate.
Journal ArticleDOI
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
TL;DR: In this paper, lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT) of 300 GHz were presented.
Proceedings ArticleDOI
Self-aligned-gate GaN-HEMTs with heavily-doped n + -GaN ohmic contacts to 2DEG
Keisuke Shinohara,D. Regan,Andrea Corrion,David F. Brown,Yan Tang,Joel C. Wong,G. Candia,Adele E. Schmitz,Helen Fung,S. Kim,Miroslav Micovic +10 more
TL;DR: In this paper, the authors report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron gas (2DEG).