Journal ArticleDOI
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
V. Yu. Davydov,Yu. E. Kitaev,I. N. Goncharuk,Alexander N. Smirnov,J. Graul,O. Semchinova,Dirk Uffmann,M. B. Smirnov,A.P. Mirgorodsky,Robert A. Evarestov +9 more
TLDR
In this paper, the results of room-and low-temperature measurements of second-order Raman scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly disordered samples are presented.Abstract:
We present the results of room- and low-temperature measurements of second-order Raman scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly disordered samples. A complete group-theory analysis of phonon symmetry throughout the Brillouin zone and symmetry behavior of phonon branches, including the analysis of critical points, has been performed. The combined treatment of these results and the lattice dynamical calculations based on the phenomenological interatomic potential model allowed us to obtain the reliable data on the phonon dispersion curves and phonon density-of-states functions in bulk GaN and AlN. @S0163-1829~98!06840-4#read more
Citations
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Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Optical bandgap energy of wurtzite InN
TL;DR: Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy as discussed by the authors, and growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction.
Journal ArticleDOI
Nitrogen-related local vibrational modes in ZnO:N
A. Kaschner,U. Haboeck,Martin Strassburg,M. Strassburg,G. Kaczmarczyk,Axel Hoffmann,Christian Thomsen,A. Zeuner,H. Alves,D. M. Hofmann,Bruno K. Meyer +10 more
TL;DR: In this article, the influence of nitrogen on the lattice dynamics of ZnO was investigated using secondary ion mass spectroscopy (SIMS) and the Raman spectra revealed vibrational modes at 275, 510, 582, 643, and 856 cm−1.
Journal ArticleDOI
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
TL;DR: It is demonstrated that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium Nitride (GaN)-based device structures onto foreign substrates.
Journal ArticleDOI
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
TL;DR: In this paper, the use of micro-Raman spectroscopy to monitor non-invasively GaN, AlGaN and AlN material parameters for process and growth monitoring/control is demonstrated.
References
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Book
Dynamical Theory of Crystal Lattices
Max Born,Kʿun Huang +1 more
TL;DR: Born and Huang's classic work on the dynamics of crystal lattices was published over thirty years ago, and it remains the definitive treatment of the subject as mentioned in this paper. But it is not the most complete work on crystal lattice dynamics.