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Journal ArticleDOI

Photon‐assisted avalanche spreading in reach‐through photodiodes

A.L. Lacaita, +3 more
- 08 Feb 1993 - 
- Vol. 62, Iss: 6, pp 606-608
TLDR
In this paper, the authors investigated the spreading of the avalanche process over the area of reach-through avalanche photodiodes operated in Geiger mode and found that photons emitted from hot carrier relaxations played the dominant role in the avalanche dynamics.
Abstract
We have investigated the spreading of the avalanche process over the area of reach‐through avalanche photodiodes operated in Geiger mode. A comparison between the measurements and the results of a computer simulation suggests that photons emitted from hot carrier relaxations play the dominant role in the avalanche dynamics. It is the randomness of the photon‐assisted process which impairs the performance of these detectors in timing measurements.

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Citations
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Journal ArticleDOI

Avalanche photodiodes and quenching circuits for single-photon detection

TL;DR: Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called singlephoton avalanche diodes SPAD's.
Journal ArticleDOI

Geiger-mode avalanche photodiodes, history, properties and problems

TL;DR: Geiger-mode avalanche photodiodes (G-APDs) have been developed during recent years and promise to be an alternative to photomultiplier tubes.
Journal ArticleDOI

Advances in solid state photon detectors

TL;DR: Semiconductor photodiodes were developed in the early 'Forties approximately at the time when the photomultiplier tube became a commercial product (RCA 1939) as mentioned in this paper.
Journal ArticleDOI

Evolution and prospects for single-photon avalanche diodes and quenching circuits

TL;DR: In this article, the evolution of solid-state avalanche detectors of single optical photons is discussed and issues for further progress are discussed, and the main technological issues that hamper the development of detectors with wide sensitive area and of array detectors with high filling factor are illustrated.
Journal ArticleDOI

Physics and numerical simulation of single photon avalanche diodes

TL;DR: In this paper, the authors present results of the numerical simulation of the transient behavior of shallow junction single photon avalanche diodes (SPADs) and develop a bidimensional model for above breakdown simulations and show that the initially photogenerated charge density builds up locally by an avalanche multiplication process and then spreads over the entire detector area by a diffusion-assisted process.
References
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Journal ArticleDOI

Photon Emission from Avalanche Breakdown in Silicon

TL;DR: In this article, it was shown that the number of light spots increases with the current rather than individual spots growing brighter, and that all the breakdown current is carried through the junction by these localized light-emitting spots.
Journal ArticleDOI

Hot-carrier luminescence in Si

TL;DR: In this article, the authors investigated the physical mechanisms responsible for light emission in Si under varying doping and carrier conditions and as a function of hot-carrier distribution functions, and concluded that the dominant light-emission mechanism in normally biased Si MOSFET's is a combination of direct and phonon-assisted inter-conduction-band radiation.
Journal ArticleDOI

20-ps timing resolution with single-photon avalanche diodes

TL;DR: In this paper, a new silicon epitaxial device structure was designed to give improved timing performance with respect to previous single photon avalanche diodes (SPADs) and extensive tests were carried out to establish the timing resolution of the device in time correlated photon counting (TCPC).
Journal ArticleDOI

Quasistatic Approximation for Semiconductor Avalanches

R. Kuvås, +1 more
TL;DR: In this article, a time-dependent differential equation for the average conduction current density in a semiconductor avalanche has been derived in the quasistatic approximation, where unequal ionization rates and drift velocities have been assumed.
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