Journal ArticleDOI
Physics-based surface potential, electric field and drain current model of a δp+ Si1–xGex gate–drain underlap nanoscale n-TFET
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In this article, a 2D model for surface potential, electric field and drain current for a nanoscale silicon tunnel field effect transistors (TFET) with a δp+Si 1−xGex layer at source-channel tunnel junction was developed.Abstract:
This article develops a 2-D model for surface potential, electric field and drain current for a nanoscale silicon tunnel field effect transistors (TFET) with a δp+Si1−xGex layer at source–channel tunnel junction. Mathematical formulation based on the TFET physics has been carried out throughout the text taking into consideration the various parameters involving the mole-fraction-dependent Si1−xGex layer. Both lateral and vertical electric fields have been modelled. A comparison is conducted between the modelled and the simulated values for three cases: polysilicon gate with silicon dioxide as gate dielectric, aluminium gate with alumina as gate dielectric and aluminium gate with hafnium oxide as gate dielectric. The model is found to be valid for all the three cases.read more
Citations
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Journal ArticleDOI
An Analytical Model of Drain Current in a Nanoscale Circular Gate TFET
Rupam Goswami,Brinda Bhowmick +1 more
TL;DR: In this article, the authors presented an analytical model of drain current in a silicon tunnel FET with a circular gate, which involves the bifurcation of the complete geometry into a rectangular gate conventional TFET, and the CG TFET itself based on the number of solvable regions of the TFET.
Journal ArticleDOI
Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation
TL;DR: In this article, a method to suppress the ambipolar effect and enhance the on-state current in tunnel field effect transistors by exploiting the advantages of Silicon-Germanium (SiGe) was proposed.
Journal ArticleDOI
Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET
TL;DR: In this article, the statistical impact of mole fraction on threshold voltage, on current, and off current in high-k/metal gate SiGe channel tunnel FETs due to work function variability (WFV) of the metal gate was presented.
Journal ArticleDOI
An Algorithm for Extraction of Threshold Voltage in Heterojunction TFETs
Rupam Goswami,Brinda Bhowmick +1 more
TL;DR: In this paper, an algorithm based on two-dimensional Poisson's Equation was proposed to extract threshold voltage in a silicon tunnel field effect transistor (TFET) with a SiGe layer at tunnel junction.
Journal ArticleDOI
Device physics based analytical modeling for electrical characteristics of single gate extended source tunnel FET (SG-ESTFET)
TL;DR: In this article, a two dimensional analytical model for Single Gate Extended Source Tunnel FET has been developed which is based on the solution of Poisson's equation simplified using parabolic approximation method.
References
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Journal ArticleDOI
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
TL;DR: In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.
Journal ArticleDOI
High dielectric constant oxides
TL;DR: In this article, the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects are discussed.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
TL;DR: In this paper, a dual material gate (DMG) was applied to a tunnel field effect transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage.
Journal ArticleDOI
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
TL;DR: In this paper, a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field effect transistors (TFETs) is presented, using semiconducting carbon nanotubes as the model channel material.
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