Journal ArticleDOI
Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
Reads0
Chats0
TLDR
In this article, the relaxation process of the thermal strain in a GaN film due to the thermal expansion coefficient difference in the GaN(0001)/α-Al2O3(0001) heterostructure is studied by varying the film thickness of GaN in a wide range from 1 to 1200 µm.Abstract:
The relaxation process of the thermal strain in a GaN film due to the thermal expansion coefficient difference in the GaN(0001)/α-Al2O3(0001) heterostructure is studied by varying the film thickness of GaN in a wide range from 1 to 1200 µm. The lattice constant c has a large value of 5.191 A at a film thickness less than a few microns, while it decreases to about 150 µm, and becomes constant above 150 µm, indicating that the strain is almost completely relaxed. The intrinsic lattice constants of wurtzite GaN free from the strain, a0 and c0, are determined to be 3.1892±0.0009 and 5.1850±0.0005 A, respectively.read more
Citations
More filters
Journal ArticleDOI
X-ray diffraction of III-nitrides
Michelle A. Moram,M E Vickers +1 more
TL;DR: In this article, the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides, are reviewed, along with the basic principle of X-ray diffusion of thin thin films, and some useful values needed in calculations, including elastic constants and lattice parameters.
Journal ArticleDOI
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Isamu Akasaki,Hiroshi Amano +1 more
TL;DR: In this paper, the growth mechanism in heteroepitaxial growth of nitrides on highly mismatched substrates has been investigated and shown to yield high quality GaN, AlGaN, GaInN and their quantum well structures.
Journal ArticleDOI
Progress and prospects of group-III nitride semiconductors
S.N Mohammad,Hadis Morkoç +1 more
TL;DR: In this paper, the authors review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them, focusing on the current status of wide bandgap gallium nitride, and related semiconductors from both the materials and devices points of view.
Journal ArticleDOI
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
Journal ArticleDOI
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
H. Angerer,D. Brunner,F. Freudenberg,Oliver Ambacher,Martin Stutzmann,R. Höpler,T. Metzger,E. Born,Günther Dollinger,Andreas Bergmaier,S. Karsch,H. J. Körner +11 more
TL;DR: In this article, the exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections, and the results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system.
References
More filters
Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
Journal ArticleDOI
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
TL;DR: In this article, a thin AIN buffer layer was proposed to reduce the microscopic fluctuation in crystallite orientation and improve the crystalline quality of the GaN and Ga 1−x Al x N (0 x ≦ 0.4) films.
Journal ArticleDOI
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
TL;DR: In this article, the most essential role of the buffer layer was found to be the supply of the nucleation sites with the same crystal orientation as the substrate, and the promotion of the lateral growth of GaN due to the decrease in interfacial free energy between the substrate and the epitaxial GaN film.
Journal ArticleDOI
Growth of single crystal GaN substrate using hydride vapor phase epitaxy
TL;DR: In this article, a homo-epitaxially grown GaN on a thin GaN buffer layer was shown to have high purity and high crystalline quality, and the magnitude of the strain of the homogeneous GaN was less than half that of a hetero-EPITaxially generated GaN.
Journal ArticleDOI
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11\bar{2}0) and (0001) Sapphire Substrates
TL;DR: In this paper, the deformation potential of GaN films on (11 0) and (0001) sapphire substrates has been investigated by X-ray Bond's method and low temperature photoluminescence measurement.
Related Papers (5)
The preparation and properties of vapor- deposited single-crystalline GaN
H. P. Maruska,J. J. Tietjen +1 more