Journal ArticleDOI
GaN on Si Technologies for Power Switching Devices
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TLDR
In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.Abstract:
This paper reviews the recent activities for normally-off GaN-based gate injection transistors (GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN heterostructures with good crystallinity over 200-mm Si substrates with eliminated bowing enables low-cost fabrication of GaN devices with high breakdown voltages. A novel normally-off GaN transistor called as GIT is proposed in which hole injection from the p-type AlGaN gate increases the drain current with low on-state resistance by conductivity modulation. The low on-state resistance in GaN-based devices greatly helps to increase the efficiency of power switching systems. A GaN-based three-phase inverter successfully drives a motor with high efficiency of 99.3% at a high output power of 1500 W. The presented GaN-based devices are expected to greatly help saving energy in the future as an indispensable power switching system.read more
Citations
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Journal ArticleDOI
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Journal ArticleDOI
GaN Technology for Power Electronic Applications: A Review
TL;DR: In this article, a review of the fundamental material properties of gallium nitride (GaN) as they relate to silicon carbide (SiC) and SiC is presented.
Journal ArticleDOI
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
TL;DR: In this paper, a 600-V normally-off SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported.
Journal ArticleDOI
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
Journal ArticleDOI
A survey of Gallium Nitride HEMT for RF and high power applications
TL;DR: In this paper, a comprehensive study about an emerging GaN HEMT technology suitable for RF and high power applications is presented. But it was found that AlN/GaN based HEMTs were superior in offering highest drain current of 4 A, high 2DEG charge density (ns) of 6 × 1013 cm−2, highest cutoff frequency of 2.02 THZ, while preserving breakdown voltages.
References
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Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
TL;DR: In this article, the elastic constants for zinc-blende and wurtzite were obtained from density-functional-theory calculations utilizing ab initio pseudopotentials and plane-wave expansions.
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this article, the authors showed that almost perfect multilayers composed of epitaxial GaAs and Ga (As 0.5 P 0.1 ) films can be made from materials with rather different lattice parameters.