Journal ArticleDOI
Robust SiO2 gate dielectric thin films prepared through plasma-enhanced atomic layer deposition involving di-sopropylamino silane (DIPAS) and oxygen plasma: Application to amorphous oxide thin film transistors
Yoo-Jin Choi,Seung-Muk Bae,Jae-Hwan Kim,Eui-Hyun Kim,Hee-Soo Hwang,Jeong-Woo Park,Heesun Yang,Eunsoo Choi,Jin-Ha Hwang +8 more
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TLDR
In this paper, a SiO 2 gate dielectric was applied to amorphous oxide thin-film transistors constructed from InGa-Zn-O (IGZO) oxide layers, which functioned as channel layers in the bottom-gated thin film transistor (TFT) structure.About:
This article is published in Ceramics International.The article was published on 2018-02-01. It has received 16 citations till now. The article focuses on the topics: Gate dielectric & Oxide thin-film transistor.read more
Citations
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Thermal Atomic Layer Deposition of Device-QualitySiO 2 Thin Films under 100 °C Using an AminodisilanePrecursor
TL;DR: In this article, the authors report a low-temp SiO2 dielectric material that is widely used in the microelectronics industry, but its growth or deposition requires high thermal budgets.
Journal ArticleDOI
Preparation of super-hydrophobic films based on waterborne polyurethane and their hydrophobicity characteristics
Bo Zhao,Runping Jia +1 more
TL;DR: In this article, a super-hydrophobic waterborne fluorinated polyurethanes films containing guanidine group (WFPUs films) via one-step spray method was designed and fabricated.
Journal ArticleDOI
SiO2 thin film growth through a pure atomic layer deposition technique at room temperature
Didier Arl,Vincent Rogé,Noureddine Adjeroud,B. R. Pistillo,Mouhamadou Moustapha Sarr,Naoufal Bahlawane,Damien Lenoble +6 more
TL;DR: In this paper, less contaminated and porous SiO2 films were grown via ALD at room temperature, and the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl4, NH3 and H2O.
Journal ArticleDOI
Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation
Zhang Weiguang,Jijun Li,Xing Yongming,Xiaomeng Nie,Lang Fengchao,Shiting Yang,Xiaohu Hou,Chunwang Zhao +7 more
TL;DR: In this paper, the surface morphology of three SiO2 thin films with different thicknesses was investigated by nanoindentation technique, and the dependence of the hardness of the Si O2 thin film with its thickness was analyzed.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
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ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
Journal ArticleDOI
Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
TL;DR: In this article, a working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding, and three new materials are presented as examples.
Related Papers (5)
Effect of Double-Layered Al2O3/SiO2 Dielectric Materials on In-Ga-Zn-O (IGZO)-Based Amorphous Transparent Thin Film Transistors
Chan-Rok Park,Jin-Ha Hwang +1 more