Journal ArticleDOI
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
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TLDR
In this article, the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (c -plane), semipolar (2021), nonpolar (1010) (m-plane).Abstract:
This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (c -plane), semipolar (2021), semipolar (2021), and nonpolar (1010) (m-plane). Based on simulations, we show that the semipolar (2021) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (2021) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (2021) LED with an external quantum efficiency of more than 50% at 100 A/cm2.read more
Citations
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Journal ArticleDOI
Comparison between blue lasers and light-emitting diodes for future solid-state lighting
TL;DR: In this article, the authors compared the performance of LEDs and blue laser diode (LD) for future solid-state lighting (SSL) systems and compared their current state-of-the-art input-power-density-dependent power-conversion efficiencies and potential improvements both in their peak powerconversion efficiency and in the input power densities at which those efficiencies peak.
Journal ArticleDOI
Toward Smart and Ultra-Efficient Solid-State Lighting
Jeffrey Y. Tsao,Mary H. Crawford,Michael E. Coltrin,Arthur J. Fischer,Daniel D. Koleske,Ganapathi S. Subramania,George T. Wang,Jonathan J. Wierer,Robert F. Karlicek +8 more
TL;DR: In this article, the current status of solid-state lighting relative to its ultimate potential to be "smart" and "ultra-efficient" is reviewed, and the long-term ultimate route to both might well be color-mixed RYGB lasers.
Journal ArticleDOI
The formation mechanism, improved photoluminescence and LED applications of red phosphor K2SiF6:Mn4+
TL;DR: In this paper, a red phosphor K2SiF6:Mn4+ has been prepared by etching of SiO2 in HF solution at a KMnO4 concentration as low as 0.08 mol L−1.
Journal ArticleDOI
2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system.
Changmin Lee,Chao Shen,Hassan M. Oubei,Michael Cantore,Bilal Janjua,Tien Khee Ng,Robert M. Farrell,Munir M. El-Desouki,James S. Speck,Shuji Nakamura,Boon S. Ooi,Steven P. DenBaars +11 more
TL;DR: The demonstrated laser-based lighting system can be used simultaneously for indoor broadband access and illumination applications with good color stability and high data transmission rate.
Journal ArticleDOI
Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.
Changyi Li,Jeremy B. Wright,Sheng Liu,Ping Lu,Jeffrey J. Figiel,Benjamin Leung,Weng W. Chow,Igal Brener,Daniel D. Koleske,T. S. Luk,Daniel F. Feezell,S. R. J. Brueck,George T. Wang +12 more
TL;DR: The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
TL;DR: In this article, structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ga 0.95N (6 nm) multiple quantum wells.