Journal ArticleDOI
Silicon single-electron transistor fabricated by anisotropic etch and oxidation
TLDR
In this paper, a fabrication process for a single-electron transistor on silicon was proposed, which is based on electron beam lithography and KOH anisotropic etching, and a structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained.About:
This article is published in Microelectronic Engineering.The article was published on 2006-04-01. It has received 20 citations till now. The article focuses on the topics: Hybrid silicon laser & LOCOS.read more
Citations
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Journal ArticleDOI
Review of nanostructured devices for thermoelectric applications.
TL;DR: This review paper will put a particular emphasis on nanostructured silicon, which represents a valid compromise between good thermoelectric properties on one side and material availability, sustainability, technological feasibility on the other side.
Journal ArticleDOI
Effect of deposition temperature on the growth of nanocrystalline silicon network from helium diluted silane plasma
Koyel Bhattacharya,Debajyoti Das +1 more
TL;DR: The effect of deposition temperature on nanocrystallization and, thereby, on different optical, electrical and structural properties of the Si : H network has been studied by radio frequency (RF)-plasma enhanced chemical vapour deposition, at a moderate RF-power (100 W) and moderate pressure (0.5 Torr), using silane as the source gas and helium as the only diluent, without hydrogen.
Journal ArticleDOI
Silicon nanowire pH sensors fabricated with CMOS compatible sidewall mask technology
TL;DR: In this paper, a CMOS compatible sidewall mask technology (SMT) was proposed for top-down fabrication of SiNWs and a highly sensitive pH sensor based on SiNW FETs.
Journal ArticleDOI
Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
Arash Dehzangi,A. Makarimi Abdullah,Farhad Larki,Sabar D. Hutagalung,Elias Saion,Mohd Nizar Hamidon,Jumiah Hassan,Yadollah Gharayebi +7 more
TL;DR: The atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer.
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Fabrication of silicon nanostructures by geometry controlled oxidation
TL;DR: In this paper, a trapezoidal cross section of a top silicon layer of silicon on insulator substrates is used for fabrication of a silicon nanowire with an initial cross-section of 15 nm.
References
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Journal ArticleDOI
Anisotropic Etching of Crystalline Silicon in Alkaline Solutions I . Orientation Dependence and Behavior of Passivation Layers
TL;DR: In this article, the anisotropic etching behavior of single-crystal silicon and the behavior of and in an ethylenediamine-based solution as well as in aqueous,, and were studied.
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Silicon single-electron quantum-dot transistor switch operating at room temperature
TL;DR: In this article, a single-electron quantum-dot transistor was fabricated, which showed drain current oscillations at room temperature, attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel.
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Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors
TL;DR: In this paper, a photonic high-frequency capacitance-voltage (HF C-V) response of metal-oxide semiconductor (MOS) capacitors is reported for the analysis of interface states in MOS systems.
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Etch rates and morphology of silicon (h k l) surfaces etched in KOH and KOH saturated with isopropanol solutions
Irena Zubel,M. Kramkowska +1 more
TL;DR: In this article, the effects of adding isopropyl alcohol (IPA) to KOH etch depth measurements were investigated. And it was shown that adding IPA to Koh etch results in bulky hillocks formation on the whole etched area.
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Silicon anisotropic etching in KOH-isopropanol etchant
Irena Barycka,Irena Zubel +1 more
TL;DR: In this article, the shapes of the etched figures are compared with the crystallographic description of the silicon structure and the planes that disappear and develop during the etching process are pointed out.