Journal ArticleDOI
Solution-processable metal oxide semiconductors for thin-film transistor applications
TLDR
In this review, the merits of solution-processed metal oxide semiconductors are discussed and their application in thin-film transistors for large-area electronics is considered.Abstract:
In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.read more
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Solution Combustion Synthesis of Nanoscale Materials
TL;DR: This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions.
Journal ArticleDOI
Metal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti,Niko Munzenrieder,Niko Munzenrieder,Christian Vogt,Hendrik Faber,Lars Büthe,Giuseppe Cantarella,Francesca Bottacchi,Thomas D. Anthopoulos,Gerhard Tröster +9 more
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Journal ArticleDOI
High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang,Binghao Wang,Wei Huang,Lifeng Chi,Mohammed Al-Hashimi,Tobin J. Marks,Antonio Facchetti +6 more
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Journal ArticleDOI
Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells
Nilushi Wijeyasinghe,Anna Regoutz,Flurin Eisner,Tian Du,Leonidas Tsetseris,Yen-Hung Lin,Hendrik Faber,Pichaya Pattanasattayavong,Jinhua Li,Feng Yan,Martyn A. McLachlan,David J. Payne,Martin Heeney,Thomas D. Anthopoulos,Thomas D. Anthopoulos +14 more
TL;DR: In this article, aqueous-processed CuSCN hole-transport layers (HTLs) are used to construct planar organometal halide perovskite solar cells.
Journal ArticleDOI
Sol-gel metal oxide dielectrics for all-solution-processed electronics
TL;DR: In this article, the authors present a comprehensive review of sol-gel MOx dielectric materials with a specific focus on the extensive categorization of their structures/compositions and advanced approaches for realizing ultimate material properties and next-generation device platforms.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.