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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
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Journal ArticleDOI
Superior tunable photocatalytic properties for water splitting in two dimensional GeC/SiC van der Waals heterobilayers
Md. Rasidul Islam,Md. Rasidul Islam,Md. Sherajul Islam,Md. Sherajul Islam,Abu Farzan Mitul,Md. Rayid Hasan Mojumder,A. S. M. Jannatul Islam,Catherine Stampfl,Jeongwon Park,Jeongwon Park +9 more
TL;DR: In this article, the photocatalytic properties of two-dimensional GeC-based van der Waals heterobilayers (vdW-HBLs) are systematically investigated to determine the amount of hydrogen (H2) fuel generated by water splitting.
Journal ArticleDOI
Flexible Silicon Carbide Based Nano-generator Driven by Water Evaporation
TL;DR: In this paper, a flexible natural water evaporation (NWE) driven silicon carbide (SiC) nano-generator on the polyethylene terephthalate (PET) substrate is presented.
Journal ArticleDOI
Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
Radu Hristu,Stefan G. Stanciu,Denis E. Tranca,Efstathios K. Polychroniadis,George A. Stanciu +4 more
TL;DR: This experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the “optical signature” concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide.
Journal ArticleDOI
Identification of sublattice damages in swift heavy ion irradiated N-doped 6H-SiC polytype studied by solid state NMR.
TL;DR: It is shown that increased levels of nitrogen doping, than used before, lead to the observation of Knight shifts emanating from an increase in electron density in the conduction band, which in (13)C far exceed those in (29)Si MAS spectra.
Journal ArticleDOI
Layered growth modelling of epitaxial growth processes for SiC polytypes
Zhaoqing Liu,Jun Ni +1 more
TL;DR: In this article, a layered growth model for SiC polytypes in which a SiC substrate is employed is studied using first-principles calculations, and the corresponding phase diagrams of epitaxial growth processes are given.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
TL;DR: In this article, the thermal conductivity of high purity SiC and impure Si and SiC has been measured over the temperature range from 3° to 300°K, and it was shown that the thermal properties of the highest purity SiCs are intermediate between those of pure Si and pure diamond, and at 300°k is greater than that of copper.