Journal ArticleDOI
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
Citations
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Journal ArticleDOI
Scalable growth of SiC quasi-aligned nanoneedle arrays and their electron emission behaviors under high temperatures
TL;DR: In this article, a scaling of SiC quasi-aligned nanoarrays on SiC wafer substrate was reported through pyrolysis of polymer precursor by using Au as the catalysts.
DissertationDOI
Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques
TL;DR: This document describes the development and marketing strategy and marketing plans for the 4H-6H and HEMT ranges from 2018 to 2023.
Journal ArticleDOI
Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
Valdemar Abou Hamad,Valdemar Abou Hamad,Tony Abi Tannous,Maher Soueidan,Laurent Gremillard,Damien Fabrègue,Jose Penuelas,Youssef Zaatar +7 more
TL;DR: In this article, the stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied.
Journal ArticleDOI
Design optimization of 600 V SiC SITs for high power and high frequency operation
TL;DR: In this paper, a new approach utilizing a supplementary highly doped region (SHDR) was demonstrated to achieve both high power capability and high operating frequency for a recessed gate silicon carbide (SiC) static induction transistor.
Journal ArticleDOI
Monitoring of the plasma generated by a gas-puff target source
TL;DR: In this article, a 10-Hz repetition rate, Nd:YAG pulsed laser, pulse energy of 0.69 J, pulse duration of 3 ns, irradiated a double-stream gas-puff target source, gave rise to the formation of plasma and emission of soft x-ray and extreme ultraviolet radiation.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
TL;DR: In this article, the thermal conductivity of high purity SiC and impure Si and SiC has been measured over the temperature range from 3° to 300°K, and it was shown that the thermal properties of the highest purity SiCs are intermediate between those of pure Si and pure diamond, and at 300°k is greater than that of copper.