Journal ArticleDOI
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
Citations
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Journal ArticleDOI
Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs
Judith Berens,Manesh V. Mistry,Dominic Waldhör,Alexander L. Shluger,Gregor Pobegen,Tibor Grasser +5 more
TL;DR: In this article , the authors investigate the origin of TAT and GOX leakage in differently annealed gate oxides experimentally, using 4H-SiC trench MOSFETs, and theoretically, using density functional theory (DFT) simulations.
Temperature effect on charge-state transition levels of defects in semiconductors
TL;DR: HuHuang et al. as discussed by the authors derived the basic formulas for temperature-dependent defects and established two fundamental rules for the temperature dependence of εα(q/q) in semiconductors.
Proceedings ArticleDOI
Modeling SiC MPS diodes
TL;DR: The SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail and the simple modification of the model causing the improvement of its accuracy is proposed.
Journal ArticleDOI
Thin PSG Process for 4H-SiC MOSFET
Yogesh K. Sharma,Ayayi C. Ahyi,Tamara Isaacs-Smith,Aaron Modic,Yi Xu,Eric Granfukel,Michael R. Jennings,Craig A. Fisher,Stpehen M. Thomas,Philip Mawby,Sarit Dhar,Leonard C. Feldman,John R. Williams +12 more
TL;DR: In this article, a modified thin phosphorous (P) passivation process, as described in this abstract, can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.
Journal ArticleDOI
A Study on N 2 O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
TL;DR: In this paper, the effect of N2O direct oxidation processes with re-oxidation on SiC/SiO2 interface characteristics has been investigated, and it was confirmed that SiC and SiO2 interfaces have better performance than with other conventional oxidation processes.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
TL;DR: In this article, the thermal conductivity of high purity SiC and impure Si and SiC has been measured over the temperature range from 3° to 300°K, and it was shown that the thermal properties of the highest purity SiCs are intermediate between those of pure Si and pure diamond, and at 300°k is greater than that of copper.