Journal ArticleDOI
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
Citations
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Journal ArticleDOI
Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration
TL;DR: In this article , a sandwich setup was used to induce step-bunching on monocrystalline 4H-SiC(0001) surfaces, and the most parallel step and terrace structures were generated using 400 µm thick liquid Si though this led to long range inhomogeneities associated with complex mass transport.
Journal ArticleDOI
Microstructural studies of core/rim structure of polycarbosilane-derived SiC consolidated by spark plasma sintering
TL;DR: In this article, polycarbosilane (PCS) and spark plasma sintering (SPS) were applied to overcome the low sinterability and the use of Sintering additives.
Book ChapterDOI
Introduction and Literature Review
TL;DR: The piezoresistance is defined as the change in electrical resistance of a material under external mechanical strain or stress, which was discovered by Smith in 1954 (Barlian et al., Proc IEEE, 97(3):513-552, 2009, this paper ).
Journal ArticleDOI
Theoretical study of the thermodynamic stability and electronic structure of thin films of 3 C , 2 H , and 2 D silicon carbides
Alexandr A. Kuzubov,N. S. Eliseeva,Pavel O. Krasnov,Felix N. Tomilin,Alexander S. Fedorov,A. V. Tolstaya +5 more
TL;DR: In this paper, the thermodynamic stability and electronic structure of thin films based on the polytypes 3C, 2H, and 2D with a thickness of a few nanometers have been studied.
Journal ArticleDOI
Investigation of the recovery behavior of irradiation defects induced by a neutron in 4H-SiC combining Raman scattering and lattice parameters
Shouchao Zhang,Yu Yang,Hongfei Liu,Hongyu Chen,Xin Li,Defeng Liu,Fei Zhu,Zhipeng Liu,Yi-pu Cheng +8 more
TL;DR: In this article , a defect recovery mechanism was discussed using activation energies and the evolution of Raman spectra, as well as the defect types and polytype transformation caused by irradiation.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
TL;DR: In this article, the thermal conductivity of high purity SiC and impure Si and SiC has been measured over the temperature range from 3° to 300°K, and it was shown that the thermal properties of the highest purity SiCs are intermediate between those of pure Si and pure diamond, and at 300°k is greater than that of copper.