Journal ArticleDOI
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
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Progress in the production and modification of PVDF membranes
TL;DR: A comprehensive overview of recent progress on the production and modification of polyvinylidene fluoride (PVDF) membranes for liquid-liquid or liquid-solid separation can be found in this article.
Journal ArticleDOI
Substrates for gallium nitride epitaxy
L. Liu,James H. Edgar +1 more
TL;DR: In this paper, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed.
Journal ArticleDOI
Review: Semiconductor Piezoresistance for Microsystems
TL;DR: This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of Piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.
Journal ArticleDOI
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung,Chin-Che Tin,John R. Williams,K. McDonald,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Leonard C. Feldman,O. W. Holland,M.K. Das,John W. Palmour +10 more
TL;DR: In this article, the authors demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide.
Journal ArticleDOI
Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
Dung-Sheng Tsai,Keng-Ku Liu,Der Hsien Lien,Meng-Lin Tsai,Chen Fang Kang,Chin An Lin,Lain-Jong Li,Lain-Jong Li,Jr-Hau He +8 more
TL;DR: Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain, fast photoresponse, and high thermal stability.
References
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Journal ArticleDOI
Activation of ion implanted dopants in α‐SiC
TL;DR: In this paper, the activation of implanted dopants in 6Hα-SiC using a pulsed excimer laser was reported using point contact current voltage (PCIV) measurements.
Journal ArticleDOI
Temperature-dependent interface reactions and electrical contact properties of titanium on 6H-SiC
TL;DR: In this article, the formation and electrical properties of 6H-SiC contacts were investigated in terms of metallurgical and electrical aspects, and it was shown that the phase in contact with the SiC determines the electrical properties and the possibility of manufacturing a complete Schottky diode using n-type 6H -SiC and Ti contacts.
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High quality 4h-sic epitaxial layers grown by chemical vapor deposition
TL;DR: In this article, high quality homoepitaxial layers of 4H-SiC have been grown by chemical vapor deposition in a hot wall reactor and the residual doping concentration obtained by capacitance versus voltage measurements was as low as 2×1014 cm−3.
Journal ArticleDOI
Effects of Hydrogen Additive on Obtaining Residue‐Free Reactive Ion Etching of β ‐ SiC in Fluorinated Plasmas
P. H. Yih,A. J. Steckl +1 more
TL;DR: In this article, the formation and prevention of residues during long-term reactive ion etching (RIE) of [beta]-SiC thin films in a variety of fluorinated gas plasmas mixed with oxygen was discussed.
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Residue‐Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas II .
P. H. Yih,Andrew J. Steckl +1 more
TL;DR: In this article, the residue-free reactive ion etching of 6H-SiC in the same gas plasmas was reported and the etch rate and etched surface morphology under different etching conditions were presented.