Journal ArticleDOI
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.Abstract:
Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.read more
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Journal ArticleDOI
Energy barriers for point-defect reactions in 3C-SiC
TL;DR: In this paper, the energy barrier of each hop is calculated via climbing image nudged elastic band methods for paths guided by the AIMD simulations, and the final paths and barriers are determined by comparing different pathways.
Journal ArticleDOI
Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications
TL;DR: A review of recent progress in Ohmic contacts to n-and p-type SiC reported in literature can be found in this article, where the mechanism of Ohmic contact to SiC, surface preparation methods, and performance of ohmic contacts are discussed.
Journal ArticleDOI
Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
TL;DR: In this article, the authors measured the resonance frequency of the cantilever as a function of the silicon-carbide film thickness and developed an appropriate model to determine the value of the film's elastic modulus.
Journal ArticleDOI
Full mineralization of toluene by photocatalytic degradation with porous TiO2/SiC nanocomposite film
TL;DR: In this article, porous TiO 2 /SiC nanocomposite films were synthesized by ball-milling and screen printing technique and their photocatalytic properties in the degradation of toluene were carried out in a self-made reactor system.
Journal ArticleDOI
Focused ion beam-assisted manipulation of single and double β-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-ω method
TL;DR: A reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator to control one-dimensional (1D) nanostructures is developed.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
TL;DR: In this article, the thermal conductivity of high purity SiC and impure Si and SiC has been measured over the temperature range from 3° to 300°K, and it was shown that the thermal properties of the highest purity SiCs are intermediate between those of pure Si and pure diamond, and at 300°k is greater than that of copper.