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Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

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TLDR
In this article, a photoluminescence study was performed at different temperatures on bulk ZnO samples annealed in zinc- and oxygen-rich atmospheres, where different annealing conditions create oxygen and zinc vacancies in a controlled way in the ZnOs samples.
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This article is published in Solid State Communications.The article was published on 2008-02-01. It has received 121 citations till now. The article focuses on the topics: Zinc & Photoluminescence.

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Journal ArticleDOI

Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices

TL;DR: In this article, the origin of visible emission centers in ZnO nanorods grown with different approaches is discussed, and the observed optical, electrical, and electro-optical characteristics of these LEDs are discussed with an emphasis on the deep level centers that cause the emission.
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Zinc oxide nanowires: controlled low temperature growth and some electrochemical and optical nano-devices

TL;DR: In this article, the growth and size control of ZnO nanowires on Si substrates using low temperature techniques is investigated and the effect of the annealing on these low temperature grown ZnOs is investigated.
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Native Defects in ZnO: Effect on Dye Adsorption and Photocatalytic Degradation

TL;DR: In this paper, the influence of native defects on the adsorption and photocatalytic degradation of anionic and cationic dyes for different ZnO nanoparticles was investigated.
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Annealing effects on optical properties of low temperature grown ZnO nanorod arrays

TL;DR: In this paper, a two-step chemical bath deposition method was used to produce well-aligned ZnO nanorods on Si substrates and the structure and optical properties of the grown nanorod were investigated.
References
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Journal ArticleDOI

A comprehensive review of zno materials and devices

TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
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Mechanisms behind green photoluminescence in ZnO phosphor powders

TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
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Green luminescent center in undoped zinc oxide films deposited on silicon substrates

TL;DR: The photoluminescence (PL) spectra of undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied in this paper, where two emission peaks, centered at 3.18 eV and 2.38 eV, were found to correspond to oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
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Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
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Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

TL;DR: In this paper, the authors study the intrinsic defect physics of ZnO and find that ZnOs cannot be doped p type via native defects, despite the fact that they are shallow donors.
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