Journal ArticleDOI
Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates
B. S. Kang,Fan Ren,Y. Irokawa,K. W. Baik,Stephen J. Pearton,Chang Chi Pan,G.-T. Chen,J.-I. Chyi,H.-J. Ko,H.-Y. Lee +9 more
TLDR
In this article, the performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported.Abstract:
The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported. The power figure-of-merit (VB)2/RON where VB is the reverse breakdown voltage and RON is the on-state resistance was 11.5 MW cm−2. The forward turn-on voltage was ∼3.5 V at 25 °C, with an on-state resistance of ∼5×10−3 Ω cm2. The reverse recovery time was ⩽50 ns in switching from forward bias to reverse bias. The reverse breakdown showed a temperature coefficient of −0.45 V/C.read more
Citations
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Patent
Group III Nitride Articles and Methods for Making Same
TL;DR: Group III (Al, Ga, In) nitride compounds have been used to produce optoelectronic devices, such as light emitting diodes (LEDs), laser diodors (LDs) and photodetectors.
Journal ArticleDOI
Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
TL;DR: In this paper, Schottky diodes were formed on bulk or epitaxial β-Ga2O3 using Ni/Au or Pt-Au and the electrical characteristics measured as a function of temperature in the range 25-200°C.
Patent
Inclusion-free uniform semi-insulating group iii nitride substrates and methods for making same
TL;DR: In this paper, a 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same.
Journal ArticleDOI
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
Yi Zhou,Dake Wang,Claude Ahyi,Chin-Che Tin,John R. Williams,Minseo Park,N. Mark Williams,Andrew D. Hanser +7 more
TL;DR: In this paper, the reverse breakdown voltages (VB) as high as 630 V and 600 V were achieved for 50μm and 150μm diameter rectifiers, respectively.
Journal ArticleDOI
Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
Yi Zhou,Mingyu Li,Dake Wang,Claude Ahyi,Chin-Che Tin,John D. Williams,Minseo Park,N. Mark Williams,Andrew D. Hanser +8 more
TL;DR: In this paper, a vertical Schottky diode rectifier was fabricated using a bulk n−GaN wafer using a PtSchottky contacts on the Ga face and full backside ohmic contact was prepared on the N face by using Ti∕Al The root mean square surface roughness of the Ga and N faces are 061 and 47nm, respectively.
References
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Journal ArticleDOI
GaN based transistors for high power applications
TL;DR: In this paper, the maximum density of the two-dimensional electron gas at the GaN/AlGaN heterointerface or in GaN and AlGaN quantum well structures can exceed 2×1013 cm−2, which is more than an order of magnitude higher than for traditional GaAs/alGaAs heterostructures.
Journal ArticleDOI
SiC power Schottky and PiN diodes
TL;DR: In this paper, the design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV 4H-SiC SiC PiN diode and 8.6 kV SiC power diodes are described in detail.
Journal ArticleDOI
High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination
TL;DR: In this paper, 1 kV 4H and 6 h SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination were fabricated using Ni-SiC ohmic contact formation.
Journal ArticleDOI
Performance evaluation of high-power wide band-gap semiconductor rectifiers
Malay Trivedi,Krishna Shenai +1 more
TL;DR: In this article, an empirical closed-form expression is presented to predict the avalanche breakdown voltage of wide band-gap semiconductors based on an approximation of the impact ionization coefficient in terms of the seventh power of the electric field.
Journal ArticleDOI
SiC power diodes provide breakthrough performance for a wide range of applications
TL;DR: In this article, the electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) Diodes in the voltage range from 600 V through 5000 V.
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