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Temperature tuned defect induced magnetism in reduced graphene oxide

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TLDR
Temperature plays a crucial role in controlling the magnetism as well as the defects in graphene and at 600 °C the self-repair mechanism helps the defects to mend but resulting in the decrement of magnetization and providing a good quality graphene with less defects.
Abstract
The existence of ferromagnetism in the wonder material graphene has opened up the path for many future spintronics and memory applications. But simultaneously it is very important to understand the variation of these properties with temperature in regards to the device applications. Here we observed defect induced ferromagnetism in chemically reduced graphene and the effect of temperature on it. Several theoretical studies have proved that the main cause of ferromagnetism in graphene is due to various defects. The observed results established that these defects can be mended by treating the samples at elevated temperatures but sacrificing the ferromagnetism simultaneously. Hence, temperature plays a crucial role in controlling the magnetism as well as the defects in graphene. In this study we revealed that at 600 °C the self-repair mechanism helps the defects to mend but resulting in the decrement of magnetization and providing a good quality graphene with less defects.

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Transition Metal Doped Phosphorene: First-Principles Study

TL;DR: In this paper, the structural property, binding energy, and magnetic properties of transition metal doped phosphorene layer were investigated by changing the TM impurity impurity dopants in the substitutional site.
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Magnetic graphene for microwave absorbing application: Towards the lightest graphene-based absorber

TL;DR: In this article, the Nitrogen-doped graphene (NG) was synthesized by a facile hydrothermal method with graphene oxide (GO) and urea as precursors.
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Emerging chemical strategies for imprinting magnetism in graphene and related 2D materials for spintronic and biomedical applications

TL;DR: A systematic classification and physicochemical description of approaches leading to equip graphene with magnetic properties, including introduction of point and line defects into graphene lattices, spatial confinement and edge engineering, doping of graphene lattice with foreign atoms, and sp3 functionalization are discussed.
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Room temperature organic magnets derived from sp(3) functionalized graphene.

TL;DR: A series of room temperature organic magnets prepared by a simple and controllable route based on the substitution of fluorine atoms in fluorographene with hydroxyl groups show room temperature antiferromagnetic ordering, which has never been observed for any sp-based materials.
References
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The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Raman spectrum of graphene and graphene layers.

TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
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The chemistry of graphene oxide

TL;DR: This review will be of value to synthetic chemists interested in this emerging field of materials science, as well as those investigating applications of graphene who would find a more thorough treatment of the chemistry of graphene oxide useful in understanding the scope and limitations of current approaches which utilize this material.
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Chemical methods for the production of graphenes.

TL;DR: The use of colloidal suspensions to produce new materials composed of graphene and chemically modified graphene is reviewed, which is both versatile and scalable, and is adaptable to a wide variety of applications.
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Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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