Journal ArticleDOI
Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors
TLDR
In this paper, two models of electron tunneling from metal to a semiconductor via traps are proposed, one called generalized thermionic trap-assisted tunneling (GTTT) and the other one called thermionic trapped-assisted tunnelling (TTT).Abstract:
We propose two models of electron tunneling from metal to a semiconductor via traps. In addition to the electrons below the metal Fermi level, the models also include the thermally activated electrons above the Fermi level. The first model is called generalized thermionic trap-assisted tunneling (GTTT), which considers tunneling through both triangular and trapezoidal barriers present in metal insulator semiconductor (MIS) structures. The second model is called thermionic trap-assisted tunneling (TTT), which considers tunneling through triangular barriers present in modern Schottky junctions. The GTTT model is shown to predict the low field leakage currents in MIS structures with nitrided oxide as insulator, and the TTT model is shown to predict the reverse gate leakage in AlGaN∕GaN high electron mobility transistors.read more
Citations
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Book ChapterDOI
Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT
TL;DR: In this article , the Si3N4 was used as a dielectric between gate and AlN layer to enhance the efficiency and reliability of the conventional HEMT reducing the gate leakage current and short channel effects.
Proceedings ArticleDOI
Charge trapping and degradation of Ga2O3 isolation structures for power electronics
C. De Santi,A. Nardo,Man Hoi Wong,Ken Goto,Akito Kuramata,S. Yamakoshi,Hironaru Murakami,Yoshinao Kumagai,Masataka Higashiwaki,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini +11 more
TL;DR: In this paper, the authors analyzed lateral and vertical isolation structures obtained by Mg implantation and annealing at 1000°C in Halide Vapor Phase Epitaxy β-Ga2O3.
Journal ArticleDOI
Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test
TL;DR: In this paper , the effect of thermal storage test on GaN high electron mobility transistor (HEMT) is investigated by observing off-state drain leakage current and on-state hysteresis and maximum transconductance.
Proceedings ArticleDOI
Admittance spectroscopy and capacitance dispersion of AlGaN/GaN hetero-structures
TL;DR: In this paper, the trap densities of states (D it ) of these traps were extracted in the range of ∼19×1012 eV−1cm−2 with the reverse bias voltage ranging from −5 Volts to 0 Volt.
Journal ArticleDOI
Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
Bernd Zippelius,Michael Krieger,Heiko B. Weber,Gerhard Pensl,Hiroyuki Nagasawa,Takamitsu Kawahara,Naoki Hatta,Kuniaki Yagi,Hidetsugu Uchida,Motoki Kobayashi +9 more
TL;DR: In this paper, a large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes, caused by a high density of stacking faults (SFs).
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Book
Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Journal ArticleDOI
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the authors investigated the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), and detailed electrical properties of the ungated and Schottky-gated portion of the device were investigated separately.
Journal ArticleDOI
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
TL;DR: In this paper, the gate leakage currents in AlGaN/GaN heterostructure field effect transistor (HFET) structures with conventional and polarization-enhanced barriers have been studied.