Journal ArticleDOI
Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors
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TLDR
In this paper, two models of electron tunneling from metal to a semiconductor via traps are proposed, one called generalized thermionic trap-assisted tunneling (GTTT) and the other one called thermionic trapped-assisted tunnelling (TTT).Abstract:
We propose two models of electron tunneling from metal to a semiconductor via traps. In addition to the electrons below the metal Fermi level, the models also include the thermally activated electrons above the Fermi level. The first model is called generalized thermionic trap-assisted tunneling (GTTT), which considers tunneling through both triangular and trapezoidal barriers present in metal insulator semiconductor (MIS) structures. The second model is called thermionic trap-assisted tunneling (TTT), which considers tunneling through triangular barriers present in modern Schottky junctions. The GTTT model is shown to predict the low field leakage currents in MIS structures with nitrided oxide as insulator, and the TTT model is shown to predict the reverse gate leakage in AlGaN∕GaN high electron mobility transistors.read more
Citations
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Journal ArticleDOI
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
Apurba Chakraborty,Saptarsi Ghosh,Partha Mukhopadhyay,Sanjay Kumar Jana,Syed Mukulika Dinara,Ankush Bag,Mihir Kumar Mahata,Rahul Kumar,Subhashis Das,Palash Das,Dhrubes Biswas +10 more
TL;DR: In this paper, the reverse bias leakage current mechanism of AlGaN/InGAN/GaN heterostructure was investigated by current-voltage measurement in temperature range from 298 K to 423 K.
Journal ArticleDOI
Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
Hiroyuki Okino,Norifumi Kameshiro,Kumiko Konishi,Naomi Inada,Kazuhiro Mochizuki,Akio Shima,Natsuki Yokoyama,Renichi Yamada +7 more
TL;DR: In this paper, the effects of Schottky barrier height and electric field on the reverse leakage currents were investigated and it was shown that the suppression of the electric field by applying a JBS structure reduced reverse leakage current to 10-2 times that of the Ni SBD.
Journal ArticleDOI
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
Juraj Racko,Peter Benko,I. Hotový,Ladislav Harmatha,Miroslav Mikolášek,Ralf Granzner,M. Kittler,Frank Schwierz,Juraj Breza +8 more
TL;DR: In this article, the authors present a physical model of trap-assisted tunneling that can quantitatively determine the effect of traps upon the total current through a GaN/AlGaN//GaN heterostructure based on expressing the occupation probability of the trapping centers by electrons in terms of thermal and tunneling exchange times.
Journal ArticleDOI
Stability and degradation of isolation and surface in Ga2O3 devices
C. De Santi,A. Nardo,Man Hoi Wong,Ken Goto,Akito Kuramata,S. Yamakoshi,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini +11 more
TL;DR: In this article, the reliability of isolation structures and surfaces for the gallium oxide material system was investigated and it was shown that even though insulation by Mg-doping implantation and diffusion is found to provide a stable electrical isolation at increasing temperature, a significant thermallyactivated leakage flows through surface states.
Proceedings Article
Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K – 400K
TL;DR: In this article, the gate and drain leakage currents of AlGaN/GaN high electron mobility transistors on SiC at sub-threshold regime for the temperature range 300K - 400K were investigated.
References
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Book
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TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
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TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Journal ArticleDOI
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the authors investigated the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), and detailed electrical properties of the ungated and Schottky-gated portion of the device were investigated separately.
Journal ArticleDOI
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
TL;DR: In this paper, the gate leakage currents in AlGaN/GaN heterostructure field effect transistor (HFET) structures with conventional and polarization-enhanced barriers have been studied.