Journal ArticleDOI
Time dependent electrical resistance of Bi2(Te0.4Se0.6)3 thin films in vacuum and on exposure to atmosphere
V. Damodara Das,S. Selvaraj +1 more
TLDR
In this paper, the authors measured electrical resistance in vacuum (2×10 −5 ǫ) as a function of time and found that the resistance increased as pressure increased, and the resistance varied with the altitude of the vacuum chamber.About:
This article is published in Solid State Communications.The article was published on 1998-11-13. It has received 3 citations till now. The article focuses on the topics: Carbon film & Vacuum chamber.read more
Citations
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Journal ArticleDOI
Nanocrystalline MoBi2Se5 Ternary Mixed Metal Chalcogenide Thin-films for Solar Cell Applications
Rahul M. Mane,V.B. Ghanwat,Vijay V. Kondalkar,Kishorkumar V. Khot,S. R. Mane,Pramod S. Patil,Popatrao N. Bhosale +6 more
TL;DR: In this article, optical, structural, morphological and photoelectrochemical properties were investigated of ternary MoBi 2 Se 5 thin film prepared by simple arrested precipitation technique (APT).
Proceedings ArticleDOI
HWBE and FE Growths Techniques of the Semiconductors Compounds with Applications in Thermal Infrared Devices
Journal ArticleDOI
PbTe Flash Evaporation on Si Substrates for Heterojunction Infrared Detectors
TL;DR: In this article, flash evaporation of PbTe directly over single crystals p-type Si substrates, in order to produce heterojunction infrared detectors (HIRD), working at 4.3 micrometers IR wavelength.
References
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Journal ArticleDOI
Materials for thermoelectric energy conversion
TL;DR: The field of thermoelectric energy conversion is reviewed from both a theoretical and an experimental standpoint in this paper, with particular emphasis being placed on the most recent developments in high-temperature semiconductors.
Journal ArticleDOI
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
TL;DR: In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.
Journal ArticleDOI
Charge transfer controlled surface interactions between oxygen and CdSe films
TL;DR: In this paper, the interaction of oxygen with CdSe surfaces has been studied with thin films of cdSe evaporated in ultra high vacuum in the temperature range 0-360°C and pressure range 10−4−10mm Hg.
Journal ArticleDOI
The adsorption of oxygen on clean silicon surfaces
Mino Green,K.H. Maxwell +1 more
TL;DR: In this article, the adsorption of oxygen on clean silicon surfaces produced by crushing in vacuo has been examined in the pressure range 30-200 μ Hg of oxygen at room temperature.
Journal ArticleDOI
Surface Transport Phenomena in PbSe Epitaxial Films
M. H. Brodsky,Jay N. Zemel +1 more
TL;DR: In this article, the effect of ambients on the electrical properties of a number of PbSe epitaxial films was examined and the authors concluded that the existing surface-mobility calculations for degenerate semiconductors are inadequate.
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