Journal ArticleDOI
Tunable Power Switching in Nonvolatile Flexible Memory Devices Based on Graphene Oxide Embedded with ZnO Nanorods
TLDR
In this article, the resistive switching and flexibility behavior of zinc oxide nanorods (ZNs) incorporated graphene oxide (GO) sheets were investigated for flexible resistive random access memory (RRAM).Abstract:
The growing demand for portable and bendable nonvolatile memory systems has motivated extensive research in the field of flexible resistive random access memory (RRAM) devices. This study investigated the resistive switching and flexibility behavior of zinc oxide nanorods (ZNs) incorporated graphene oxide (GO) sheets. GOZNs-based RRAM devices having top metal aluminum electrodes were fabricated on flexible indium tin oxide (ITO) coated polyethylene terephthalate (ITOPET) substrate. The devices having the structure Al/GOZNs/ITOPET showed typical bipolar resistive switching characteristics with switching voltages lower than those of Al/GO/ITOPET devices. The significant (∼50%) decrement in operating voltages in the case of GOZNs-based RRAM was attributed to enhanced concentration of oxygen vacancies into the GO matrix due to the incorporation of ZNs, which was supported by X-ray photoelectron spectroscopy studies. These memory devices showed repeatable and reliable switching characteristics having an on/off...read more
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Journal ArticleDOI
Graphene-Based Nanomaterials for Catalysis
TL;DR: Graphene is considered as one of the most promising materials in a wide range of applications because of its outstanding electronic, optical, thermal, and mechanical properties as mentioned in this paper, and it has been used extensively in catalysis applications.
Journal ArticleDOI
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
TL;DR: This review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO and covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices.
Journal ArticleDOI
Graphene and Related Materials for Resistive Random Access Memories
TL;DR: Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs) as mentioned in this paper, and the performance of a number of RRAM prototypes using GRMs is summarized Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media.
Journal ArticleDOI
Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application
TL;DR: It is demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V.
Journal ArticleDOI
Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories
V. Karthik Nagareddy,Matthew D. Barnes,Federico Zipoli,Khue T. Lai,A. M. Alexeev,Monica F. Craciun,C. David Wright +6 more
TL;DR: This work presents not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrates that the approach provides easily accessible multilevel storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates.
References
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Journal ArticleDOI
The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Graphene oxide as a chemically tunable platform for optical applications
TL;DR: This Review highlights the recent advances in optical properties of chemically derived GO, as well as new physical and biological applications that are attracting chemists for its own characteristics.
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Zinc Oxide-From Synthesis to Application: A Review.
TL;DR: The most important methods of preparation of ZnO divided into metallurgical and chemical methods are presented and possible applications in various branches of industry: rubber, pharmaceutical, cosmetics, textile, electronic and electrotechnology, photocatalysis were introduced.
Journal ArticleDOI
Graphene oxide thin films for flexible nonvolatile memory applications.
Hu Young Jeong,Jong Yun Kim,Jong Yun Kim,Jeong Won Kim,Jin Ok Hwang,Ji-Eun Kim,Jeong Yong Lee,Tae Hyun Yoon,Byung Jin Cho,Sang Ouk Kim,Rodney S. Ruoff,Sung-Yool Choi +11 more
TL;DR: The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy.