Journal ArticleDOI
Two-dimensional effects in hot-electron modified MOSFET's
TLDR
In this paper, the asymmetrical behavior of hot-electron modified MOSFET's with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions.Abstract:
This brief shows how the asymmetrical behavior of hot-electron modified MOSFET's with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular experimental data concerning enhanced threshold-voltage shift, asymmetrical transconductance, anomalous body effect, as well as short-channel-like behavior exhibited by the stressed transistors, are presented and discussed.read more
Citations
More filters
Journal ArticleDOI
Degradation of n-MOS-Transistors after pulsed stress
Werner Weber,C. Werner,G. Dorda +2 more
TL;DR: In this paper, it was shown that degradation after pulsed stress is enhanced over comparable static stress up to a factor 10 and that it is a sensitive function of the phase shift between gate and drain voltage pulses.
Journal ArticleDOI
Hot-electron-induced interface state generation in n-channel MOSFET's at 77 K
S.L. Von Bruns,R.L. Anderson +1 more
TL;DR: In this article, hot-electron-induced degradation in n-channel Si MOSFETs was investigated at 77 K for 48 hours with a drain voltage of 5 V and a gate voltage corresponding to the maximum substrate current.
Journal ArticleDOI
Hot-electron-induced degradation in MOSFET's at 77 K
TL;DR: In this article, the authors investigated hot-electron-induced degradation of transconductance and threshold voltage at 77 K of n-channel enhancement metal-gate MOSFET's as a function of electrical stress applied at liquid nitrogen temperature.
Journal ArticleDOI
Vieillissement des transistors MOS submicroniques après contrainte électrique
TL;DR: In this article, Proprietes d'une nouvelle generation de transistors MOS, analysees en fonction de leurs tres faibles longueurs de canal, which varient entre 3 and 0,3 μ.
Journal ArticleDOI
Influence of hot-electron-induced aging on the dynamic conductance of short-channel MOSFETs
Gerard Ghibaudo,B. Cabon +1 more
TL;DR: In this article, an analysis of the dynamic conductance of a non-uniform MOSFET operating in weak inversion is presented, which is particularly suitable for the study of hot-electron-induced aging in submicron MOS transistors.
References
More filters
Journal ArticleDOI
A simple theory to predict the threshold voltage of short-channel IGFET's
TL;DR: A simple expression for the threshold voltage of an IGFET is derived from a charge conservation principle which geometrically takes into account two-dimensional edge effects in this paper, which is valid for short and long-channel lengths.
Journal ArticleDOI
MINIMOS—A two-dimensional MOS transistor analyzer
TL;DR: MINIMOS as discussed by the authors is a software tool for numerical simulation of planar MOS transistors, which is able to calculate doping profiles from the technological parameters specified by the user, and a new mobility model has been implemented which takes into account the dependence on the impurity concentration, electric field, temperature and especially the distance to the Si-SiO 2 interface.
Journal ArticleDOI
Hot-electron emission in N-channel IGFET's
TL;DR: In this article, the emission of both substrate and channel hot electrons from the silicon into the gate insulator of n-channel IGFET's is discussed, and the effect of changing important material and geometrical parameters as well as temperature and terminal voltages is documented with emission data.
Journal ArticleDOI
Nonplanar VLSI device analysis using the solution of Poisson's equation
J.A. Greenfield,Robert W. Dutton +1 more
TL;DR: Techniques are presented for calculating the drain current of small-geometry MOSFET's in the linear, subthreshold, and punch-through regions of device operation and the solution method demonstrates good convergence characteristics and minimizes computer storage requirements.
Journal ArticleDOI
Hot-carrier instability in IGFET's
S. A. Abbas,R. C. Dockerty +1 more
TL;DR: In this article, a fraction of the hot carriers from the channel region into the gate insulator of an IGFET is trapped in the gate dielectric, and an undesirable shift in the operating characteristics results.