Journal ArticleDOI
Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm.
Ying Xie,Bo Zhang,Shuxian Wang,Dong Wang,Aizhu Wang,Zeyan Wang,Haohai Yu,Huaijin Zhang,Yanxue Chen,Mingwen Zhao,Baibiao Huang,Liangmo Mei,Jiyang Wang +12 more
TLDR
Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.Abstract:
Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2 photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid-infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2 samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W-1 and 1.55 × 109 Jones, respectively, which represent the most broadband MoS2 photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.read more
Citations
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Journal ArticleDOI
Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives
TL;DR: All aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials are provided in a comprehensive yet concise treatment.
Journal ArticleDOI
2D Layered Material-Based van der Waals Heterostructures for Optoelectronics
Xing Zhou,Xiaozong Hu,Jing Yu,Shiyuan Liu,Zhaowei Shu,Qi Zhang,Huiqiao Li,Ying Ma,Hua Xu,Tianyou Zhai +9 more
TL;DR: In this article, the authors reviewed the state-of-the-art research activities that focus on the 2D van der Waals heterostructures and their optoelectronic applications.
Journal ArticleDOI
Nonlinear optical properties and applications of 2D materials: theoretical and experimental aspects
TL;DR: In this article, the authors survey the recent advances in nonlinear optics and the applications of two-dimensional (2D) materials and highlight a few representative current applications of 2D materials to photonic and optoelectronic devices.
Journal ArticleDOI
High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe2.
Qijie Liang,Qijie Liang,Qixing Wang,Qian Zhang,Jingxuan Wei,Sharon Xiaodai Lim,Rui Zhu,Junxiong Hu,Wei Wei,Chengkuo Lee,Chorng Haur Sow,Wenjing Zhang,Andrew T. S. Wee +12 more
TL;DR: A high-performance ultra-broadband photodetector based on PdSe2 with unique pentagonal atomic structure with potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable is reported.
Journal ArticleDOI
In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
Enping Wu,Di Wu,Cheng Jia,Yuange Wang,Huiyu Yuan,Longhui Zeng,Tingting Xu,Zhifeng Shi,Yongtao Tian,Xinjian Li +9 more
TL;DR: In this paper, a 2D WS2/Si heterojunction with a type-II band alignment was formed in situ, which produced a high Ion/Ioff ratio over 10,6 responsivity of 224 mA/W, specific detectivity of 1.5 × 1012 Jones, high polarization sensitivity, and broadband response up to 3043 nm.
References
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Journal ArticleDOI
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Journal ArticleDOI
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