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Various Structures of 2D Transition-Metal Dichalcogenides and Their Applications

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The article was published on 2018-11-01. It has received 93 citations till now. The article focuses on the topics: Transition metal.

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Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

TL;DR: In this article, a chloride molecular doping technique was proposed to reduce the contact resistance in the few-layer WS2 and MoS2, which greatly reduced the Schottky barrier width.
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Recent advances in doping engineering of black phosphorus

TL;DR: In this paper, the authors review the recent progress of BP doping engineering including substitution doping, intercalation doping, surface charge transfer doping and electrostatic carrier doping, and provide challenges and future opportunities for the doping engineering of BP.
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Spider web-like carbonized bacterial cellulose/MoSe2 nanocomposite with enhanced microwave attenuation performance and tunable absorption bands

TL;DR: In this article, a bacterial cellulose (BC)-derived carbon nanofibers/MoSe2 nanocomposite was fabricated and phosphoric acid was used to dope phosphorus in BC, in which MoSe2 microspheres were dropped on the BC network like a dew-covered spider web.
Journal ArticleDOI

Functionalized Hybridization of 2D Nanomaterials.

TL;DR: As the most intensely investigated 2D materials in the post‐graphene era, transition metal dichalcogenide nanosheets are comprehensively investigated through their element doping, physical/chemical functionalization, and nanohybridization.
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Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS 2 monolayer

TL;DR: In this article, a two-dimensional SnS2 nanosheets with well-controlled Sb doping concentration via direct vapor growth approach and following micromechanical cleavage process are presented.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
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