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How many transistors are in Ryzen 7? 

Thin-film transistor
Transistor
Wide-bandgap semiconductor
Ballistic conduction
Oxide

Answers from top 8 papers

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Papers (8)Insight
Journal Article•DOI
Nanometer-scale organic thin film transistors from self-assembled monolayers.
Dominique Vuillaume
01 Jun 2002-Journal of Nanoscience and Nanotechnology
22 Citations
These molecular architectures provide a basis for the building blocks of molecular transistors.
Journal Article•DOI
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
Zijun Chen, Yi Pei, S. Newman, David F. Brown, Roy B. Chung, Sarah L. Keller, Steven P. DenBaars, Shuji Nakamura, Umesh Mishra 
01 May 2009-Applied Physics Letters
26 Citations
Thus, this device is promising for highly scaled transistors.
Journal Article•DOI
Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium--Gallium--Zinc Oxide
Kiyoshi Kato, Yutaka Shionoiri, Yusuke Sekine, Kazuma Furutani, Takehisa Hatano, Taro Aoki, Miyuki Sasaki, Hiroyuki Tomatsu, Jun Koyama, Sunpei Yamazaki 
13 Jan 2012-Japanese Journal of Applied Physics
87 Citations
Such extremely low off-state current characteristics show promise for new applications of IGZO transistors in memories.
Journal Article•DOI
Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors
Yong Xu, Chuan Liu, Paul S.K. Amegadze, Won-Tae Park, Dang Xuan Long, Takeo Minari, Francis Balestra, Gerard Ghibaudo, Yong-Young Noh 
30 Sep 2014-Applied Physics Letters
24 Citations
Our results provide clues to better understand oxide transistors and to optimize their performance.
Journal Article•DOI
Low RC-Constant Perforated-Channel HFET
Grigory Simin, MM Islam, Mikhail Gaevski, J. Deng, Remis Gaska, Michael Shur 
14 Feb 2014-IEEE Electron Device Letters
17 Citations
These results are especially important for new generations of power switching transistors.
Proceedings Article•DOI
A Normally-off AlGaN/GaN Transistor with R on A=2.6mΩcm 2 and BV ds =640V Using Conductivity Modulation
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda 
01 Dec 2006
77 Citations
These values are the best ones ever reported for GaN-based normally-off transistors
Journal Article•DOI
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa 
09 Mar 2007-Applied Physics Letters
666 Citations
These are the highest values ever reported for organic transistors.
Journal Article•DOI
Non-Equilibrium Phonon Distributions in Sub-100nm Silicon Transistors
Sanjiv Sinha, Eric Pop, Robert W. Dutton, Kenneth E. Goodson 
01 Jul 2006-Journal of Heat Transfer-transactions of The Asme
82 Citations
This work highlights and reduces the knowledge gaps in the electro-thermal simulation of transistors.

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