Showing papers on "Injection locking published in 2006"
Book•
01 Jan 2006TL;DR: This paper presents a meta-modelling architecture for Deep-Submicron CMOS that automates the very labor-intensive and therefore time-heavy and therefore expensive and expensive process of manually winding down and restarting the CMOS process.
Abstract: PREFACE. 1 INTRODUCTION. 1.1 Frequency Synthesis. 1.1.1 Noise in Oscillators. 1.1.2 Frequency Synthesis Techniques. 1.2 Frequency Synthesizer as an Integral Part of an RF Transceiver. 1.2.1 Transmitter. 1.2.2 Receiver. 1.2.3 Toward Direct Transmitter Modulation. 1.3 Frequency Synthesizers for Mobile Communications. 1.3.1 Integer-N PLL Architecture. 1.3.2 Fractional-N PLL Architecture. 1.3.3 Toward an All-Digital PLL Approach. 1.4 Implementation of an RF Synthesizer. 1.4.1 CMOS vs. Traditional RF Process Technologies. 1.4.2 Deep-Submicron CMOS. 1.4.3 Digitally Intensive Approach. 1.4.4 System Integration. 1.4.5 System Integration Challenges for Deep-Submicron CMOS. 2 DIGITALLY CONTROLLED OSCILLATOR. 2.1 Varactor in a Deep-Submicron CMOS Process. 2.2 Fully Digital Control of Oscillating Frequency. 2.3 LC Tank. 2.4 Oscillator Core. 2.5 Open-Loop Narrowband Digital-to-Frequency Conversion. 2.6 Example Implementation. 2.7 Time-Domain Mathematical Model of a DCO. 2.8 Summary. 3 NORMALIZED DCO. 3.1 Oscillator Transfer Function and Gain. 3.2 DCO Gain Estimation. 3.3 DCO Gain Normalization. 3.4 Principle of Synchronously Optimal DCO Tuning Word Retiming. 3.5 Time Dithering of DCO Tuning Input. 3.5.1 Oscillator Tune Time Dithering Principle. 3.5.2 Direct Time Dithering of Tuning Input. 3.5.3 Update Clock Dithering Scheme. 3.6 Implementation of PVT and Acquisition DCO Bits. 3.7 Implementation of Tracking DCO Bits 3.7.1 High-Speed Dithering of Fractional Varactors. 3.7.2 Dynamic Element Matching of Varactors. 3.7.3 DCO Varactor Rearrangement. 3.8 Time-Domain Model. 3.9 Summary. 4 ALL-DIGITAL PHASE-LOCKED LOOP. 4.1 Phase-Domain Operation. 4.2 Reference Clock Retiming. 4.3 Phase Detection. 4.3.1 Difference Mode of ADPLL Operation. 4.3.2 Integer-Domain Operation. 4.4 Modulo Arithmetic of the Reference and Variable Phases. 4.4.1 Variable-Phase Accumulator (PV Block). 4.5 Time-to-Digital Converter. 4.5.1 Frequency Reference Edge Estimation. 4.6 Fractional Error Estimator. 4.6.1 Fractional-Division Ratio Compensation. 4.6.2 TDC Resolution Effect on Estimated Frequency Resolution. 4.6.3 Active Removal of Fractional Spurs Through TDC (Optional). 4.7 Frequency Reference Retiming by a DCO Clock. 4.7.1 Sense Amplifier-Based Flip-Flop. 4.7.2 General Idea of Clock Retiming. 4.7.3 Implementation. 4.7.4 Time-Deferred Calculation of the Variable Phase (Optional). 4.8 Loop Gain Factor. 4.8.1 Phase-Error Dynamic Range. 4.9 Phase-Domain ADPLL Architecture. 4.9.1 Close-in Spurs Due to Injection Pulling. 4.10 PLL Frequency Response. 4.10.1 Conversion Between the s- and z-Domains. 4.11 Noise and Error Sources. 4.11.1 TDC Resolution Effect on Phase Noise. 4.11.2 Phase Noise Due to DCO SD Dithering. 4.12 Type II ADPLL. 4.12.1 PLL Frequency Response of a Type II Loop. 4.13 Higher-Order ADPLL. 4.13.1 PLL Stability Analysis. 4.14 Nonlinear Differential Term of an ADPLL. 4.14.1 Quality Monitoring of an RF Clock. 4.15 DCO Gain Estimation Using a PLL. 4.16 Gear Shifting of PLL Gain. 4.16.1 Autonomous Gear-Shifting Mechanism. 4.16.2 Extended Gear-Shifting Scheme with Zero-Phase Restart. 4.17 Edge Skipping Dithering Scheme (Optional). 4.18 Summary. 5 APPLICATION: ADPLL-BASED TRANSMITTER. 5.1 Direct Frequency Modulation of a DCO. 5.1.1 Discrete-Time Frequency Modulation. 5.1.2 Hybrid of Predictive/Closed PLL Operation. 5.1.3 Effect of FREF/CKR Clock Misalignment. 5.2 Just-in-Time DCO Gain Calculation. 5.3 GFSK Pulse Shaping of Transmitter Data. 5.3.1 Interpolative Filter Operation. 5.4 Power Amplifier. 5.5 Digital Amplitude Modulation. 5.5.1 Discrete Pulse-Slimming Control. 5.5.2 Regulation of Transmitting Power. 5.5.3 Tuning Word Adjustment. 5.5.4 Fully Digital Amplitude Control. 5.6 Going Forward: Polar Transmitter. 5.6.1 Generic Modulator. 5.6.2 Polar TX Realization. 5.7 Summary. 6 BEHAVIORAL MODELING AND SIMULATION. 6.1 Simulation Methodology. 6.2 Digital Blocks. 6.3 Support of Digital Stream Processing. 6.4 Random Number Generator. 6.5 Time-Domain Modeling of DCO Phase Noise. 6.5.1 Modeling Oscillator Jitter. 6.5.2 Modeling Oscillator Wander. 6.5.3 Modeling Oscillator Flicker (1/f ) Noise. 6.5.4 Clock Edge Divider Effects. 6.5.5 VHDL Model Realization of a DCO. 6.5.6 Support of Physical KDCO. 6.6 Modeling Metastability in Flip-Flops. 6.7 Simulation Results. 6.7.1 Time-Domain Simulations. 6.7.2 Frequency-Deviation Simulations. 6.7.3 Phase-Domain Simulations of Transmitters. 6.7.4 Synthesizer Phase-Noise Simulations. 6.8 Summary. 7 IMPLEMENTATION AND EXPERIMENTAL RESULTS. 7.1 DSP and Its RF Interface to DRP. 7.2 Transmitter Core Implementation. 7.3 IC Chip. 7.4 Evaluation Board. 7.5 Measurement Equipment. 7.6 GFSK Transmitter Performance. 7.7 Synthesizer Performance. 7.8 Synthesizer Switching Transients. 7.9 DSP-Driven Modulation. 7.10 Performance Summary. 7.11 Summary. APPENDIX A: SPURS DUE TO DCO SWITCHING. A.1 Spurs Due to DCO Modulation. APPENDIX B: GAUSSIAN PULSE-SHAPING FILTER. APPENDIX C: VHDL SOURCE CODE. C.1 DCO Level 2. C.2 Period-Controlled Oscillator. C.3 Tactical Flip-Flop. C.4 TDC Pseudo-Thermometer Output Decoder. REFERENCES. INDEX.
305 citations
24 Apr 2006
TL;DR: A new architecture for wireless power and data telemetry that recovers power and a system clock from a weak incident RF signal, incorporating an on-chip ADC, and employing active telemetry for data transmission is presented.
Abstract: We present a new architecture for wireless power and data telemetry that recovers power and a system clock from a weak incident RF signal. A high-efficiency RF-DC converter generates a 3-VDC supply for the system from a -12.3-dBm incident RF signal, gathered by a commercial 50-/spl Omega/ antenna. A system clock is extracted from the same incident signal, by an injection-locked LC oscillator. Sub-harmonic injection-locking facilitates the separation of the incident and the transmit signal frequencies, without need for a PLL. The proposed architecture is used in a long-range telemetry device, incorporating an on-chip ADC, and employing active telemetry for data transmission. Data is transmitted through binary phase-shift-keying of a 900-MHz carrier. The prototype, implemented in 0.25-/spl mu/m CMOS, occupies less than 1 mm/sup 2/. A wireless operation range of more than 18 meters is indicated by anechoic chamber testing.
138 citations
TL;DR: The optical injection-locking technique has been demonstrated to enhance the microwave performance of fiber-optic links based on vertical-cavity surface-emitting lasers (VCSELs) as discussed by the authors.
Abstract: The optical injection-locking technique has been demonstrated to enhance the microwave performance of fiber-optic links based on vertical-cavity surface-emitting lasers (VCSELs). We report recent advances of a comprehensive study on VCSELs under ultrahigh injection-locking conditions. The performance improvements include /spl sim/20-dB increase of both spur-free dynamic range and RF link gain, a factor of 5-10 increase in resonance frequency, as well as /spl sim/20-dB reduction in laser noise.
121 citations
TL;DR: In this article, the output characteristics of an oxide-confined AlGaAs-As quantum well vertical-cavity surface-emitting laser (VCSEL) under orthogonal optical injection are mapped as a function of the strength of the optical injection and the detuning between the injection frequency and the free-running frequency of the solitary laser, for a very large range of frequency detuning (from -82 to 89 GHz).
Abstract: In this paper, the output characteristics of an oxide-confined AlGaAs-As quantum well vertical-cavity surface-emitting laser (VCSEL) under orthogonal optical injection are mapped as a function of the strength of the optical injection and the detuning between the injection frequency and the free-running frequency of the solitary laser, for a very large range of frequency detuning (from -82 to 89 GHz). The injection light is polarized orthogonally with respect to the solitary VCSEL output light. As the injection strength increases the VCSEL switches to the master laser polarization. Polarization switching is accompanied by a rich nonlinear dynamics, including limit cycle, wave mixing, subharmonic resonance and period doubling route to chaos. Polarization switching is found with but also without injection locking. Injection locking occurs with the slave fundamental transverse mode or, for large positive detunings, with the first-order transverse mode.
100 citations
TL;DR: In this paper, a low voltage and wide locking range injection-locked frequency divider using a standard 018/spl mu/m complementary metal oxide semiconductor (CMOS) process is presented.
Abstract: A low voltage and wide locking range injection-locked frequency divider using a standard 018-/spl mu/m complementary metal oxide semiconductor (CMOS) process is presented The wide locking range and the low-voltage operation are performed by adding an injection nMOS between the differential outputs of the divider that contains on-chip transformers which result in positive feedback loops to swing the output signals above the supply and below the ground potential This dual-swing capability maximizes the carrier power and achieves low-voltage performance The measurement results show that at the supply voltage of 075-V, the divider free-running frequency is 202 GHz, and at the incident power of 0 dBm the locking range is about 149 GHz (3688%), from the incident frequency 327 to 464GHz
99 citations
TL;DR: Pan et al. as discussed by the authors performed a theoretical investigation of the polarization dynamics in a vertical-cavity surface-emitting laser (VCSEL) subject to orthogonal optical injection.
Abstract: We perform a theoretical investigation of the polarization dynamics in a vertical-cavity surface-emitting laser (VCSEL) subject to orthogonal optical injection, i.e., the injected field has a linear polarization (LP) orthogonal to that of the free-running VCSEL. In agreement with previous experiments [Z. G. Pan et al., Appl. Phys. Lett. 63, 2999 (1993)], an increase of the injection strength may lead to a polarization switching accompanied by an injection locking. We find that this route to polarization switching is typically accompanied by a cascade of bifurcations to wave-mixing dynamics and time-periodic and possibly chaotic regimes. A detailed mapping of the polarization dynamics in the plane of the injection parameters (detuning, injection strength) unveils a large richness of dynamical scenarios. Of particular interest is the existence of another injection-locked solution for which the two LP modes both lock to the master laser frequency, i.e., an elliptically polarized injection-locked (EPIL) steady state. Modern continuation techniques allow us to unveil an unfolding mechanism of the EPIL solution as the detuning varies and also to link the existence of the EPIL solution to a resonance condition between the master laser frequency and the free-running frequency of the normally depressed LP mode in the slave laser. We furthermore report an additional case of bistability, in which the EPIL solution may coexist with the second injection-locked solution (the one being locked to the master polarization). This case of bistability is a result of the interaction between optical injection and the two-polarization-mode characteristics of VCSEL devices.
96 citations
09 Oct 2006
TL;DR: In this paper, the authors used injection locking to increase the laser resonance frequency, together with a low parasitic VCSEL design, and achieved a 3 dB bandwidth of over 40 GHz.
Abstract: Injection locking is shown to greatly enhance the resonance frequency of 1.55 mum vertical-cavity surface-emitting lasers (VCSELs), from 10 to 60 GHz, under ultrahigh injection locking conditions. Using injection locking to increase the laser resonance frequency, together with a low parasitic VCSEL design, a 3 dB bandwidth of over 40 GHz was attained, a record broadband performance for directly modulated VCSELs. VCSELs with slightly detuned polarization modes are injection locked with controlled polarization angles. For the first time, a dual-resonance frequency response is observed, and is explained with a two polarization-mode injection-locked rate equation model.
80 citations
04 Dec 2006
TL;DR: In this paper, an integrated coupled-oscillator array in SiGe for millimeter-wave applications is described, and the phase noise of the coupled oscillators is below -100 dBc/Hz at a 1-MHz offset when locked to an external reference.
Abstract: This paper describes the design of an integrated coupled-oscillator array in SiGe for millimeter-wave applications. The design focuses on a scalable radio architecture where multiple dies are tiled to form larger arrays. A 2 times 2 oscillator array for a 60-GHz transmitter is fabricated with integrated power amplifiers and on-chip antennas. To lock between multiple dies, an injection-locking scheme appropriate for wire-bond interconnects is described. The 2 times 2 array demonstrates a 200 -MHz locking range and 1 times 4 array formed by two adjacent chips has a 60-MHz locking range. The phase noise of the coupled oscillators is below -100 dBc/Hz at a 1-MHz offset when locked to an external reference. To the best of the authors' knowledge, this is the highest frequency demonstration of coupled oscillators fabricated in a conventional silicon integrated-circuit process
76 citations
TL;DR: In this paper, the authors demonstrate greatly enhanced resonance frequency for vertical-cavity surface-emitting laser, from 7 to 50 GHz, under ultrahigh injection-locking conditions.
Abstract: High-speed directly modulated diode lasers are important for optical communications and optical interconnects. In this work, we demonstrate greatly enhanced resonance frequency for vertical-cavity surface-emitting lasers, from 7 to 50 GHz, under ultrahigh injection-locking conditions. In addition, a 20-dB gain is achieved for small signal modulation below resonance frequency.
72 citations
TL;DR: In this paper, a vertical-cavity surface-emitting laser (VCSEL) was submitted to orthogonal optical injection, i.e., the injected light was linearly polarized and orthogonally to that emitted by the solitary VCSEL.
Abstract: We present an experimental investigation of a vertical-cavity surface-emitting laser (VCSEL) submitted to orthogonal optical injection, i.e., the injected light is linearly polarized and orthogonal to that emitted by the solitary VCSEL. Bifurcation boundaries of qualitatively different dynamics are mapped out in the frequency detuning-injection strength plane. We unveil rich and complex dynamics including injection locking, limit cycle, wave mixing, and period doubling route to chaos.
66 citations
TL;DR: In this paper, the authors demonstrated that the output of a 2.45 GHz magnetron operated as a current-controlled oscillator through its pushing characteristic can lock to injection signals in times of the order of 100-500 ns depending on injection power, magnetron heater power, load impedance, and frequency offset of the injection frequency from the natural frequency of the magnetron.
Abstract: It is demonstrated that the output of a 2.45-GHz magnetron operated as a current-controlled oscillator through its pushing characteristic can lock to injection signals in times of the order of 100-500 ns depending on injection power, magnetron heater power, load impedance, and frequency offset of the injection frequency from the natural frequency of the magnetron. Accordingly, the magnetron can follow frequency and phase modulations of the injection signal, behaving as a narrow-band amplifier. The transmission of phase-shift-keyed data at 2 Mb/s has been achieved. Measurements of the frequency response and anode current after a switch of phase as a function of average anode current and heater power give new insight into the locking mechanisms and the noise characteristics of magnetrons
01 Sep 2006
TL;DR: Using the hard-limiting characteristics of transconductors, a new model for injection-locking, applicable for any strong and weak injection, is proposed, backed by simulations that show the powerfulness of this new model.
Abstract: Using the hard-limiting characteristics of transconductors, a new model for injection-locking, applicable for any strong and weak injection, is proposed. Backed by simulations, examples of the powerfulness of this new model are enumerated as proof of the concept.
TL;DR: The potential for high-resolution absolute-frequency spectroscopy over the entire spectrum of the frequency comb output using a single high-finesse optical reference cavity is demonstrated.
Abstract: We have performed sub-Doppler spectroscopy on the narrow intercombination line of cold calcium atoms using the amplified output of a femtosecond laser frequency comb. Injection locking of a 657-nm diode laser with a femtosecond comb allows for two regimes of amplification, one in which many lines of the comb are amplified, and one where a single line is predominantly amplified. The output of the laser in both regimes was used to perform kilohertz-level spectroscopy. This experiment demonstrates the potential for high-resolution absolute-frequency spectroscopy over the entire spectrum of the frequency comb output using a single high-finesse optical reference cavity.
TL;DR: A sweep optical frequency synthesizer is demonstrated by using a frequency-stabilized optical frequency comb and injection-locked distributed-Bragg-reflector (DBR) laser diode.
Abstract: A sweep optical frequency synthesizer is demonstrated by using a frequency-stabilized optical frequency comb and injection-locked distributed-Bragg-reflector (DBR) laser diode. The injection-locked DBR laser acts as a single-frequency filter and, simultaneously, a high-gain amplifier of the optical frequency comb. The frequency instability of the heterodyne beat signal between two independently injection-locked DBR lasers is measured to be 2.3×10−16 at 1 s averaging time. The output frequency of the sweep optical frequency synthesizer can be precisely tuned over 1 GHz, and a saturated absorption spectrum of the Cs D2 line at 852 nm is recorded by the injected DBR laser.
01 Jun 2006
TL;DR: In this article, a side-mode injection locking of a multiple-quantum-well (MQW) InGaAsP Fabry-Perot (FP) laser has been proposed, which has the advantage of optical wavelength conversion.
Abstract: Theory and experiment for dc and small-signal electrical modulation of an injection-locked quantum-well (QW) Fabry-Perot laser are presented. Our experiment is realized by performing side-mode injection locking of a multiple-quantum-well (MQW) InGaAsP Fabry-Perot (FP) laser, which has the advantage of optical wavelength conversion. We first measure the dc characteristics and optical spectra of an injection-locked laser to define its locking range and linewidth enhancement factor. We then show experimentally that the bandwidth of an injection-locked semiconductor laser is 10.5 GHz, which is around twice the free-running electrical modulation bandwidth (5.3 GHz). The relaxation frequency of the injection-locked laser can be 3.5 times greater than the free-running value. Our theoretical model includes mode competition, gain saturation, low frequency roll-off, and optical confinement factor of the QW structure. The theory shows good agreement with our experimental results. We point out that the small-signal modulation of injection-locked lasers still suffers severely from low frequency roll-off, which comes from the carrier transport effect and parasitic effect of the bias circuit. If we can reduce those effects, the modulation bandwidth can be further increased to 15 GHz, which is around 3 times of the free-running value.
TL;DR: In this paper, the phase-noise spectral density of a 9 GHz oscillator was reduced to -160 dBc/Hz at 1-kHz offset frequency, which is the lowest phase noise ever measured at microwave frequencies.
Abstract: Phase-noise spectral density of a 9-GHz oscillator has been reduced to -160 dBc/Hz at 1-kHz offset frequency, which is the lowest phase noise ever measured at microwave frequencies. This performance was achieved by frequency locking a conventional loop oscillator to a high-Q sapphire dielectric resonator operating at the elevated level of dissipated power (~0.4 W). Principles of interferometric microwave signal processing were applied to generate the error signal for the frequency control loop. No cryogenics were used. Two almost identical oscillators were constructed to perform classical two-oscillator phase-noise measurements where one oscillator was phase locked to another. The phase locking was implemented by electronically controlling the level of microwave power dissipated in the sapphire dielectric resonator
TL;DR: The operation of a novel all-optical flip-flop which consists of a slave Fabry-Perot laser diode and a specially designed master FP-LD which operates in single longitudinal mode oscillation is demonstrated.
Abstract: We demonstrate the operation of a novel all-optical flip-flop. The flip-flop consists of a slave Fabry-Perot laser diode (FP-LD) and a specially designed master FP-LD which has a built-in external cavity and operates in single longitudinal mode oscillation. The set and reset pulses were generated by external modulators at 1 Gbit/s. The rising and falling times of the output signal in on-off operation of the flip-flop were about 50 ps. The required powers of both set and reset pulses were less than -9 dBm.
TL;DR: A novel technique for designing chaotic oscillators capable of producing multiscrolls is presented, based on multilevel-logic pulse-excitation.
Abstract: A novel technique for designing chaotic oscillators capable of producing multiscrolls is presented The technique is based on multilevel-logic pulse-excitation A modified forced Van der Pol oscillator, a forced active tank resonator, and a forced cross-coupled oscillator are given as design examples
TL;DR: In this article, nonlinear dynamics of an optically injected semiconductor laser is applied to photonic microwave generation by properly adjusting the injection conditions, the optical frequency of the slave laser is first locked to the master laser, resulting in a single-sideband (SSB) microwave modulation on the optical carrier.
Abstract: Nonlinear dynamics of an optically injected semiconductor laser is applied to photonic microwave generation By properly adjusting the injection conditions, the optical frequency of the slave laser is first locked to the master laser The slave laser is then driven into a periodic dynamical state, resulting in a single-sideband (SSB) microwave modulation on the optical carrier The frequency of the SSB can be controlled by the optical injection strength and detuning Frequency-modulated SSB can, thus, be obtained from a modulated injection In this work, we experimentally investigate the generated SSB in terms of its broad tunability and fast modulation response The results suggest application of this system in radio-over-fiber and optical subcarrier multiplexing technologies when microwave frequency modulation or frequency-shift keying is employed
TL;DR: Experimental and theoretical investigation of intensity noise features in SBS for experimental configuration utilized injection locking of two semiconductor lasers for Stokes signal generation observed and analytically explained.
Abstract: We present experimental and theoretical investigation of intensity noise features in SBS for experimental configuration utilized injection locking of two semiconductor lasers for Stokes signal generation. Significant decreasing of the intensity noise of the Stokes signal with the frequency equal to the Brillouin resonance is observed and analytically explained.
Journal Article•
TL;DR: Based on the summary of the basic principle of optical generation of millimeter wave signals, the working principle of intensity modulation, optically injection locking, optical heterodyne and optoelectronic oscillator are indroduced as discussed by the authors.
Abstract: Based on the summary of the basic principle of optical generation of millimeter wave signals, the working principle of intensity modulation, optically injection locking, optical heterodyne and optoelectronic oscillator are indroduced. The typical experimental setups of the above schemes are analyzed, their advantage and disadvantage are presented, and the developing prespect is previewed their recent developments are also included.
TL;DR: A fully integrated V-band phase-locked loop (PLL) MMIC with good phase noise and low-power consumption is developed using 0.15-/spl mu/m GaAs pHEMTs, one of the highest frequency monolithic PLLs that integrates all the required elements on a single chip.
Abstract: A fully integrated V-band phase-locked loop (PLL) MMIC with good phase noise and low-power consumption is developed using 0.15-/spl mu/m GaAs pHEMTs. For V-band frequency division,a wideband divide-by-3 frequency divider is proposed using cascode FET-based harmonic injection locking. The fourth subharmonic mixer using anti-parallel diode pair is employed as a high-frequency phase detector. In this way, the required frequency of the reference oscillator is lowered to one twelfth of V-band output signal. An RC low-pass filter and DC amplifier are also integrated to effectively suppress the spurious and harmonic signals, and to increase the loop gain. To reduce the circuit interactions and frequency pulling effect, buffer amplifiers are used at the output of VCO and frequency divider. The fabricated V-band PLL MMIC shows the locking range of 840 MHz around 60.1GHz under a very low power dissipation of 370 mW. Good phase noise of -95.5 dBc/Hz is measured at 100 kHz offset. The chip size is as small as 2.35/spl times/1.80 mm/sup 2/. To the best of our knowledge, the PLL MMIC of this work is one of the highest frequency monolithic PLLs that integrates all the required elements on a single chip.
01 Sep 2006
TL;DR: This paper proposes a theory for the behavior of free-running or phase-locked oscillators that experience mutual injection pulling and the profile of the resulting sidebands is calculated analytically.
Abstract: This paper proposes a theory for the behavior of free-running or phase-locked oscillators that experience mutual injection pulling. The time- and frequency-domain responses are derived for each case and the profile of the resulting sidebands is calculated analytically. Experimental results obtained for two 1-GHz CMOS PLLs that are resistively coupled on-chip are presented.
TL;DR: In this paper, a radio-on-multimode fiber (MMF) system based on vertical-cavity surface-emitting lasers (VCSELs) injection-locked and optoelectronic feedback techniques is proposed and demonstrated.
TL;DR: In this paper, the authors investigated the intensity-polarization switching bistability by increasing and decreasing the intensity of the injected beam and for a fixed frequency detuning, i.e., the frequency offset between the master and the free running VCSEL.
Abstract: Bistability as well as dynamics associated to polarization switching in a vertical-cavity surface-emitting laser (VCSEL) submitted to orthogonal optical injection from an external master laser are investigated. Intensity-polarization switching bistability is studied by increasing and decreasing the intensity of the injected beam and for a fixed frequency detuning, i.e. the frequency offset between master and the free running VCSEL. Depending on the frequency detuning, bistable switching is experimentally found to occur with or without injection locking of the fundamental mode to the master laser frequency. For large positive detuning, injection locking of the first-order transverse mode with a strong depression of the fundamental mode has been observed. The case of frequency – polarization switching bistability, i.e. when the frequency detuning is first decreased and then increased for a fixed injected power, has also been theoretically analyzed. Qualitative comparison with previous experimental work is presented for the dependence of the width of the bistable switching region on the injection strength level. Finally we show an experimental result of complicated dynamics including period doubling route to chaos that accompany polarization switching and which motivates future theoretical investigations.
TL;DR: In this paper, the dynamic properties of Fabry-Perot laser diode (FP-LD) transmitters using sidemode injection locking, which are intended to be applied in WDM-PON and local area networks (LANs), have been investigated.
Abstract: In this paper, the dynamic properties of Fabry-Perot laser diode (FP-LD) transmitters using side-mode injection locking, which are intended to be applied in wavelength-division-multiplexed passive optical networks (WDM-PON) and local area networks (LANs), have been investigated. Both the direct modulation properties and wavelength switching properties of the transmitters have been clarified theoretically and experimentally, as well as the important direct modulation characteristics, such as injection power dependence, side-mode dependence, and wavelength detuning dependence. To confirm the transmission ability, fundamental transmission experiments of the transmitters in both continuous and discontinuous injection cases have been made. The experiments clarified that the error-free transmission was possible in both cases. Falling and rising times during wavelength switching actions in LAN applications have been calculated and measured. A high-speed switching method was proposed in this paper, and the effectiveness of the proposed method has been confirmed theoretically and experimentally
01 Dec 2006
TL;DR: In this paper, a three-phase harmonic injection-locked divider (HILD) is proposed for realizing a low-power phase-locked loop (PLL) circuit, which realizes a small chip area, a low power consumption, and a wide locking range.
Abstract: A harmonic injection-locked divider (HILD) is effective for realizing a low-power phase-locked loop (PLL) circuit because the high-frequency output of a voltage-controlled oscillator (VCO) is down-converted into a low-frequency signal instantaneously Conventional resonator-based HILDs, however, occupy a large chip area and exhibit a narrow locking range because either an LC or short-stub resonator is required Ring-oscillator-based HILDs, on the other hand, operate at a relatively low frequency, again with a narrow locking range In this study, a new HILD based on three-phase harmonic injection locking is proposed, which realizes a small chip area, a low power consumption, and a wide locking range As a result of fabrication with 018 μm CMOS, a divide-by-three HILD is realized with a power consumption of 43 μW, a maximum operating frequency of 6 GHz, and a locking range of 80% at a supply voltage of 07 V The core size is 108 μm x 105 μm
05 Mar 2006
TL;DR: In this article, the authors demonstrate record high resonance frequency (72 GHz) and record broadband performance (44 GHz) for 1.55-/spl mu/m DFB lasers under strong optical injection locking.
Abstract: We demonstrate record high resonance frequency (72 GHz) and record broadband performance (44 GHz) for 1.55-/spl mu/m direct-modulated distributed-feedback (DFB) lasers under strong optical injection locking. The frequency response above 50 GHz is measured directly using optical heterodyne detection.
01 Sep 2006
TL;DR: This paper describes a successful experiment of 1.56-GHz on-chip LC-tank resonant clock oscillator, which directly drives 2times896 flip-flops, without intermediate buffers, which results in 57 % lower clock power and 15-30 % lower total chip power compared to the conventional clocking strategy implemented on the same chip.
Abstract: This paper describes a successful experiment of 1.56-GHz on-chip LC-tank resonant clock oscillator, which directly drives 2times896 flip-flops, without intermediate buffers. Detailed power measurements of a test-chip in 130-nm CMOS technology show that the proposed resonant clocking technique results in 57 % lower clock power and 15-30 % lower total chip power compared to the conventional clocking strategy implemented on the same chip. Furthermore, clock jitter measurements show a worst-case peak-to-peak jitter of 28.4 ps (or 14.5 ps using injection locking) across 0-to-80 % data activity in flip-flops and the data-path logic
TL;DR: In this article, a two-stage differential complementary metal-oxide-semiconductor (CMOS) ring oscillator and a divide-by-two ILFD is proposed to provide a wide locking range.
Abstract: This letter proposes a wide locking range injection locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit is made of a dual band two-stage differential complementary metal-oxide-semiconductor (CMOS) ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. The divide-by-two ILFD can provide wide locking range and the measurement results show that at the supply voltage of 1.8-V, the divider free-running frequencies are 1.36GHz and 2.3GHz, and at the incident power of 0dBm, the locking range is about 1.75GHz from the incident frequency 1.9GHz to 3.65GHz at low band and 2.55GHz from 2.95GHz to 5.5GHz at high band