Showing papers on "p–n junction published in 2020"
TL;DR: In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed and exhibited an excellent performance, namely, a high photoresponsivity, specific detectivity of 5×1011 Jones, and response time of 17 ms.
Abstract: Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 106 The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 1011 Jones, and response time of 17 ms The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications
102 citations
10 Jun 2020
TL;DR: Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields as discussed by the authors.
Abstract: Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields. So far, most p–...
97 citations
TL;DR: In this article, a solar-blind photodetector based on Ga2O3 pn junction nanorod arrays (NRAs) with a graphene-silver nanowires (Ag NWs) hybrid top electrode was proposed.
75 citations
TL;DR: A Co3O4/g‐C3N4 p–n junction with excellent capacity is developed and its application in an all‐solid‐state flexible device is demonstrated, whose capacity and energy density are considerably enhanced by simulated solar light irradiation.
Abstract: Supercapacitors with the advantages of high power density and fast discharging rate have full applications in energy storage. However, the low energy density restricts their development. Conventional methods for improving energy density are mainly confined to doping atoms and hybridizing with other active materials. Herein, a Co3O4/g-C3N4 p-n junction with excellent capacity is developed and its application in an all-solid-state flexible device is demonstrated, whose capacity and energy density are considerably enhanced by simulated solar light irradiation. Under photoirradiation, the capacity is increased by 70.6% at the maximum current density of 26.6 mA cm-2 and a power density of 16.0 kW kg-1. The energy density is enhanced from 7.5 to 12.9 Wh kg-1 with photoirradiation. The maximum energy density reaches 16.4 Wh kg-1 at a power density of 6.4 kW kg-1. It is uncovered that the lattice distortion of Co3O4, reduces defects of g-C3N4, and the facilitated photo-generated charge separation by the Co3O4/g-C3N4 p-n junction all make contributions to the promoted electrochemical storage performance. This work may provide a new strategy to enhance the energy density of supercapacitors and expand the application range of photocatalytic materials.
66 citations
TL;DR: In this paper, the formation of a p-n junction at the AgI/Bi2Ga4O9 interface favors separation and transfer of photogenerated charge carriers.
Abstract: Semiconductor p–n junction engineering plays an indispensable role in developing highly efficient photocatalysts for energy conversion and environmental remediation. Herein, a novel AgI/Bi2Ga4O9 p–n junction photocatalyst is successfully constructed by an electrostatic self-assembly approach. Photoelectrochemical characterization together with density functional theory calculations shows that the formation of a p–n junction at the AgI/Bi2Ga4O9 interface favors separation and transfer of photogenerated charge carriers. The ˙O2− generated by 25%-AgI/Bi2Ga4O9 reaches a concentration of 18.8 μmol L−1 after 60 min of irradiation, which is 3.3 and 12.5 times higher than that generated by AgI and Bi2Ga4O9, providing 25%-AgI/Bi2Ga4O9 with greatly enhanced photocatalytic activity toward Acid Red 1 and metronidazole degradation. Our work provides a novel strategy for designing highly efficient photocatalysts for a wide range of energy and environmental applications.
65 citations
TL;DR: In this article, a flexible-transparent N-doped Cu2O/SnO2 p-n junction film device is prepared via a simple hybrid hydrothermal-sputtering method.
54 citations
TL;DR: In this article, a transparent NiO/Tm:CeO2 QDs/SnO2 p-n junction device is prepared via a continuous hydrothermal-chemical-sputtering method.
51 citations
TL;DR: In this paper, the relative p-n junction was proposed as a new concept, and a photoexcited charge transfer mechanism has always been one of the hotspots of photocatalysis field.
Abstract: Investigation of photoexcited charge transfer mechanism has always been one of the hotspots of photocatalysis field. In our recent studies, the relative p-n junction was proposed as a new concept, ...
44 citations
TL;DR: A novel nanosized Bi2O4/Bi2O3 p-n junction was developed by a dilute HCl acid etching and subsequent hydrothermal method, using NaBiO3·2H2O as the sole bismuth precursor, indicating that holes and superoxide radicals are the primary and secondary reactive active species during the photocatalytic degradation process, respectively.
30 citations
TL;DR: In this paper, a pn junction structure consisting of hollow p-CuO nanospheres and n-ZnO nanorods (NRs) was constructed by thermal annealing.
Abstract: We report on ultraviolet (UV) photodetectors with a pn junction structure consisting of hollow p-CuO (h-CuO) nanospheres and n-ZnO nanorods (NRs). To form the pn junction structure, thermal annealing was conducted using a transferred monolayer of Cu-ion-incorporated polymer spheres onto the n-ZnO NRs/n-Si substrate. Device performance was evaluated by comparing the effects of h-CuO nanosphere coverage changed by sphere shrinkage during thermal annealing of Cu-ion-incorporated polymer spheres. Three samples were prepared by varying the transfer times of h-CuO on ZnO NRs: 0 times (Reference), 1 time (CZ-I), and 2 times (CZ-II). The CZ-II-based UV detector shows a fast rising time of 1.8 s and a falling time of 0.26 s, which are faster rising by 2.2 and 1.3 times and faster falling by 3.1 and 32.6 times than those of the CZ-I and Reference UV detectors, respectively, under illumination with UV light at 254 nm. Moreover, the On/Off current ratio of the CZ-II UV detector is 4.58, which is about 3.3 times and 3.5 times higher than that of the CZ-I and Reference devices, respectively. The higher h-CuO coverage on the ZnO NRs that form the pn junction structure can effectively separate the electron and hole and suppress recombination by mutual transfer of photo-generated electrons and holes in the heterojunction.
28 citations
TL;DR: Large area highly crystalline MoS 2 and WS 2 thin films were successfully grown on different substrates using radio-frequency magnetron sputtering technique and high efficient pn-junction thermoelectric generator device was demonstrated for waste heat recovery and cooling applications.
Abstract: Large area highly crystalline MoS2 and WS2 thin films were successfully grown on different substrates using radio-frequency magnetron sputtering technique. Structural, morphological and thermoelectric transport properties of MoS2, and WS2 thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting devices. X-ray diffraction data revealed that crystallites of MoS2 and WS2 films are highly oriented in 002 plane with uniform grain size distribution confirmed through atomic force microscopy study. Surface roughness increases with substrate temperature and it plays a big role in electron and phonon scattering. Interestingly, MoS2 films also display low thermal conductivity at room temperature and strongly favors achievement of higher thermoelectric figure of merit value of up to 1.98. Raman spectroscopy data shows two distinct MoS2 vibrational modes at 380 cm−1 for E12g and 410 cm−1 for A1g. Thermoelectric transport studies further demonstrated that MoS2 films show p-type thermoelectric characteristics, while WS2 is an n-type material. We demonstrated high efficient pn-junction thermoelectric generator device for waste heat recovery and cooling applications.
TL;DR: A straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe2 nanoflake and the results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe2 CMOS circuits.
Abstract: Among all typical transition-metal dichalcogenides (TMDs), the bandgap of α-MoTe2 is smallest and is close to that of conventional 3D Si The properties of α-MoTe2 make it a favorable candidate for future electronic devices Even though there are a few reports regarding fabrication of complementary metal-oxide-semiconductor (CMOS) inverters or p-n junction by controlling the charge-carrier polarity of TMDs, the fabrication process is complicated Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe2 nanoflake The n-doped channel of a single α-MoTe2 nanoflake is selectively converted to a p-doped region via laser-irradiation-induced MoOx doping The homogeneous 2D MoTe2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NMH = 052 VDD , NML = 040 VDD ), and an AC gain of 4 at 10 kHz The results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe2 CMOS circuits
TL;DR: Using (Ar + H2) plasma etched b-Si nano-grass structures at low temperature (∼200 °C), one-step fabrication of autogenic single p/n-junction proof-of-concept solar cells is accomplished.
Abstract: Photovoltaic performance of solar cells automatically improves when the absorber layer itself simultaneously acts as the anti-reflection nanostructure with an enhanced active absorber area on the front surface Combined physical and chemical etching of p-c-Si wafers by (Ar + H2) plasma in inductively coupled low-pressure plasma CVD produces various nanostructures with subsequent minimization of reflectance At a reduced temperature, the rate constant of thermal diffusion of atomic-H in the Si-network becomes smaller, leading to enhanced chemical etching reactions that further increase at an elevated RF power Regrowth of the SiHn precursors produced by etching and subsequent hydrogenation in the plasma develops a high density of elongated nano-grass structures, which further align with sharp tips via Ar+ ion bombardment and elimination of loosely bound amorphous over-layers, on application of negative dc substrate bias during real-time etching and regrowth A significantly reduced reflectance (∼05%) via coherent light trapping within the uniformly distributed vertically aligned nano-grass surfaces evolves truly black-silicon (b-Si) nanostructures, which further self-convert from the p-type to n-type electronic configuration via etching-mediated modification of B-H bonds from BH1 to BH2 and/or BH3 states, producing autogenic p/n junctions Using (Ar + H2) plasma etched b-Si nano-grass structures at low temperature (∼200 °C), one-step fabrication of autogenic single p/n-junction proof-of-concept solar cells is accomplished There is plenty of room for further progress in device performance
TL;DR: In this paper, a quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n junction termination (RPN) was demonstrated.
Abstract: In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n
junction termination (RPN). The SBD has a current output of 1 kA/cm
2
at $V_{F}=2.5$ V, a low $V_{on}$ of 0.66 V ± 0.017 V, a low $R_{on,sp}$ of 1.4 $\text{m}\Omega \cdot $
cm
2
, current ON/OFF ratio of over $10^{9}$ (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm
2
. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top p-n
junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased.
TL;DR: In this paper, a transparent device of CdS QDs modified Cu2O/ZnO nano array p-n junction is prepared via simple continuous magnetron sputtering method and chemical deposition.
28 Jan 2020
TL;DR: In this article, the authors investigated the electrical and optoelectronic properties of a core-shell organic semiconducting crystal composed of an n-type single-crystal nanowire as the core and p-type one crystal as the shell.
Abstract: Electronic devices based on organic single-crystal semiconductors have been used in a range of applications, suggesting their possible use as core components of high-performance electronic devices. Various electronic devices based on unipolar organic semiconducting crystals have high electrical and optoelectronic properties compared to thin-film-based devices due to the intrinsic nature of the single crystal, such as a long-range order and a high degree of structural perfection. However, only a few studies have examined electronic devices using organic single crystals with ambipolar characteristics. This study investigated the electrical and optoelectronic characteristics of a core–shell organic semiconducting crystal composed of an n-type single-crystal nanowire as the core and p-type single crystal as the shell. The device showed ambipolar behavior with balanced electron and hole mobilities (maximum electron and hole mobility of the core–shell ambipolar crystal; 1.41 × 10–1 and 8.31 × 10–2 cm2 V–1 s–1, ...
TL;DR: In this article, a PN junction in a composite fiber consisting of a non-piezoelectric semiconductor layer between two PN dielectric layers is shown to be electromechanically coupled to the bending deformation of the fiber.
TL;DR: In this article, a site-specific deposition strategy was developed to construct supported Au catalysts by rationally constructing Ti3+ defects in TiO2 nanorods and Cu2O-TiO2 p-n junction across the interface of two components.
Abstract: Hydrogen production by photoreforming of biomass-derived ethanol is a renewable way of obtaining clean fuel. We developed a site-specific deposition strategy to construct supported Au catalysts by rationally constructing Ti3+ defects inTiO2 nanorods and Cu2O-TiO2 p-n junction across the interface of two components. The Au nanoparticles (~2.5 nm) were selectively anchored onto either TiO2 nanorods (Au@TiO2/Cu2O) or Cu2O nanocubes (Au@Cu2O/TiO2) or both TiO2 and Cu2O (Au@TiO2/Cu2O@Au) with the same Au loading. The electronic structure of supported Au species was changed by forming Au@TiO2 interface due to the adjacent Ti3+ defects and the associated oxygen vacancies while unchanged in Au@Cu2O/TiO2 catalyst. The p-n junction of TiO2/Cu2O promoted charge separation and transfer across the junction. During ethanol photoreforming, Au@TiO2/Cu2O catalyst possessing both the Au@TiO2 interface and the p-n junction showed the highest H2 production rate of 8548 μmol gcat−1 h−1 under simulated solar light, apparently superior to both Au@TiO2 and Au@Cu2O/TiO2 catalyst. The acetaldehyde was produced in liquid phase at an almost stoichiometric rate, and C−C cleavage of ethanol molecules to form CH4 or CO2 was greatly inhibited. Extensive spectroscopic results support the claim that Au adjacent to surface Ti3+ defects could be active sites for H2 production and p-n junction of TiO2/Cu2O facilitates photo-generated charge transfer and further dehydrogenation of ethanol to acetaldehyde during the photoreforming.
TL;DR: In this article, a compositionally tuned MoOx catalyst on Si photocathode was optimized by controlling the deposition gas environment and the target during RF magnetron sputtering, and the optimized MoOx stoichiometry exhibited one of the highest photocurrent density of ∼-30mA cm−2 at -0.5
Abstract: We propose the utilization of a compositionally tuned MoOx catalyst on Si photocathode for the enhanced hydrogen production and improved charge separation. The efficient MoOx catalyst stoichiometry on Si photocathode was optimized by controlling the deposition gas environment and the target during RF magnetron sputtering. The optimized MoOx stoichiometry on Si photocathode exhibited one of the highest photocurrent density of ∼-30 mA cm−2 at -0.5 V vs RHE under AM 1.5 G illumination. Importantly, the deposition of MoOx on p-Si photocathode causes a significant cathodic shift in the overpotential, indicating the catalytic effect of MoOx. The valence band edge and electrochemical studies were used to analyze the band edge positions with respect to water redox potentials and the formation of p-n junction system. The results of this work demonstrate the advantage of employing a sulfur-free and oxygen-deficient MoOx catalyst on p-Si in p-n junction configuration for the efficient PEC water splitting process.
TL;DR: In this paper, the authors characterized the performance of the Betavoltaic cells under electron-beam irradiation using scanning electron microscopy and observed an open-circuit voltage of 4.26 V, a fill factor of 0.85, and a semiconductor conversion efficiency of 28%.
Abstract: A betavoltaic cell, which directly converts beta particles into energy, is composed of a junction diode and a beta-emitting source. Because the cells can deliver electricity over a long operation life ranging from several years to a decade, they are promising devices for applications in remote locations such as outer space, deserts, and underground areas. Herein, we report efficient energy conversion using a diamond pn junction. We characterized the betavoltaic performance under electron-beam irradiation using scanning electron microscopy and observed an open-circuit voltage of 4.26 V, a fill factor of 0.85, and a semiconductor conversion efficiency of 28%. These are the best values reported thus far for betavoltaic cells. The efficiency is close to the theoretical Shockley–Queisser efficiency limit for betavoltaic cells.
TL;DR: It is shown that axial electric field increases the photocurrent quantum yield (PCQY) of CNT photodiodes, and the field dependence and diameter dependence of PCQY is studied.
Abstract: Carbon nanotube (CNT) photodiodes have the potential to convert light into electrical current with high efficiency. However, previous experiments have revealed the photocurrent quantum yield (PCQY) to be well below 100%. In this work, we show that the axial electric field increases the PCQY of CNT photodiodes. Under optimal conditions, our data suggest PCQY > 100%. We studied, both experimentally and theoretically, CNT photodiodes at room temperature using optical excitation corresponding to the S22, S33, and S44 exciton resonances. The axial electric field inside the pn junction was controlled using split gates that are capacitively coupled to the suspended CNT. Our results give new insight into the photocurrent generation pathways in CNTs and the field dependence and diameter dependence of PCQY.
TL;DR: In this paper, it was shown that the performance of silicon photovoltaic cells with deep p-n-junctions is improved due to nickel doping, and the average value of the open circuit voltage of the photo cells to group I increases by 19.7% and short-circuit current density in-creases by 89%.
Abstract: By the diffusion obtained the Si 〈B, P〉 (group I) and Si 〈B, P + Ni〉 (group II) structures with deep p–n-junctions. It is demonstrated that the parameters of silicon photovoltaic cells with deep p–n-junctions are improved due to nickel doping. After nickel diffusion, the average value of the open circuit voltage Voc of the photo cells to group I increases by 19.7%, and the short-circuit current density Jsc in-creases by 89%. It was established that the formation of nickel clusters occurs at the optimum temperature of thermal annealing T = 750–800°C. The relative increase in the efficiency of photovoltaic cells after ad-ditional thermal annealing at T = 800°C is 118.8%. In addition, in samples with a nickel-enriched area on the front side of the p–n-junction, the fill factor of the current–voltage characteristic increased by 30%. The influence of nickel atom clusters on the bulk properties of the base and the properties of the surface regions of the solar cell, where the concentration of nickel atoms is 2–2.5 orders of magnitude greater than in volume, is considered. It is proved that the nickel-rich n-layer near-surface region plays a significant role in increasing the efficiency of photovoltaic cells. Experimental results show that an increase in the lifetime of minority charge carriers leads to a sig-nificant increase in the solar cell collection factor. We associate the obtained data mainly with the getter properties of nickel atom clusters. We assume that doping with nickel clusters can increase the absorption coefficient of the base of the solar cell in the infrared region of the spectrum due to the appearance of plasmon resonance, which should lead to a better alignment of the absorption region of infrared light with the p–n-junction.
TL;DR: In this paper, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and xray photoemission spectroscopy.
Abstract: Photodetectors based on polycrystalline lead salts are widely used to detect light in the mid-infrared range because they can be used at room temperature. In their fabrication, the sensitization process is considered to be the most critical factor. In this work, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy. The results showed that lead oxides were formed during the annealing process. We also investigated the electrical properties of the samples by Hall-effect measurements. In photodetection experiments at room temperature, the PbSe-based photodetectors showed responsivity and detectivity of 0.16 A/W and 6.66 × 108 cm Hz1/2/W, respectively. Remarkably, we measured a photocurrent even without applying a bias voltage, which implies that the p–n junctions separate the carriers in these films, thus also proving the existence of micro p–n junctions in the film. A carrier separation model is proposed to describe the conduction process.
TL;DR: An in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p–n junction using scanning probe and photoelectron microscopy techniques is presented, exposing the sensitive nature of nanodevices to small scale structural variations.
Abstract: We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- A nd p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations. (Less)
TL;DR: In this article, the electromechanical and electrical behaviors of a PN junction in a multiferroic composite fiber, consisting of a piezoelectric semiconductor (PS) layer between two piezomagnetic (PM) lay...
Abstract: We study the electromechanical and electrical behaviors of a PN junction in a multiferroic composite fiber, consisting of a piezoelectric semiconductor (PS) layer between two piezomagnetic (PM) lay...
TL;DR: In this article, the authors presented an electromechanical detector based on an n-ZnO/p-NiO heterojunction with excellent sensing properties for both static and dynamic strains.
Abstract: Conquering the limitations of flexible self-powered sensors by exploring their multifunctional heterostructure remains a fascinating issue. Herein, we present an initial electromechanical detector based on an n-ZnO/p-NiO heterojunction with excellent sensing properties for both static and dynamic strains. The whole heterostructure is fabricated on a flexible and conductive PET substrate via the facile RF magnetron sputtering method. It is noteworthy that the established electromechanical sensor can serve as a self-powered vibration detector with a sensitivity of 7.67 nA%−1, representing a high gauge factor (GF) of 196 in static strain monitoring (strain range from 0% to 1%). The dynamic strain sensing is realized by the piezoelectric effect enhanced by the heterojunction, while the static strain monitoring is attributed to the regulation of the ZnO energy band near the p–n junction. In applications, the device can be employed to detect human electrophysiological stimuli such as breathing and joint motion. We believe that the above results offer a worthy way to fabricate multifunctional strain detectors and a new route to design flexible self-powered sensors in the semiconductor industry.
TL;DR: A second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption and shows improved performance in all aspects, most notably in photon detection probability.
Abstract: Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm2, with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.
TL;DR: In this article, a photoimpedance signal named "light intensity modulated impedance spectroscopy" (LIMIS = IMVS/IMPS) is analyzed, and its difference with respect to IS suggests a correlation with the surface charge carrier recombination velocity.
Abstract: Potentiostatic impedance spectroscopy (IS) is a well-known tool for characterization of materials and electronic devices. It can be complemented by numerical simulation strategies relying on drift-diffusion equations without any equivalent circuit-based assumptions. This implies the time-dependent solutions of the transport equations under small perturbation of the external bias applied as a boundary condition at the electrodes. However, in the case of photosensitive devices, a small light perturbation modulates the generation rate along the absorber bulk. This work then approaches a set of analytical solutions for the signals of IS and intensity modulated photocurrent and photovoltage spectroscopies, intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS), respectively, from one-sided p-n junction solar cells at the open-circuit. Subsequently, a photoimpedance signal named “light intensity modulated impedance spectroscopy” (LIMIS = IMVS/IMPS) is analytically simulated, and its difference with respect to IS suggests a correlation with the surface charge carrier recombination velocity. This is an illustrative result and the starting point for future more realistic numerical simulations.