Journal ArticleDOI
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
Isabella Rossetto,Matteo Meneghini,Alaleh Tajalli,Stefano Dalcanale,C. De Santi,Peter Moens,A. Banerjee,Enrico Zanoni,Gaudenzio Meneghesso +8 more
TLDR
The results demonstrate that the analyzed devices do not suffer from dynamic ON-resistance problems, and the impact of hard switching on dynamic <inline-formula> becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.Abstract:
This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain and gate waveforms (thus inducing soft and hard switching), while measuring the corresponding impact on the ON-resistance, drain current, and electroluminescence (EL). The results demonstrate that the analyzed devices do not suffer from dynamic ${R}_{ {\mathrm{\scriptscriptstyle ON}}}$ increase when they are submitted to soft switching up to ${V}_{{\text {DS}}}= 600$ V. On the contrary, hard-switching conditions lead to a measurable increase in the dynamic ON-resistance (dynamic- ${R}_{ \mathrm{\scriptscriptstyle ON}})$ . The increase in dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ induced by hard switching is ascribed to hot-electrons effects: during each switching event, the electrons in the channel are accelerated by the high electric field and subsequently trapped in the AlGaN/GaN heterostructure or at the surface. This hypothesis is supported by the following results: 1) the increase in ${R}_{ \mathrm{\scriptscriptstyle ON}}$ is correlated with the EL signal measured under hard-switching conditions and 2) the impact of hard switching on dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.read more
Citations
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Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
TL;DR: An overview and discussion of the mechanisms, characterizations, modeling, and solutions for the degradation of dynamic on-resistance in GaN power devices is presented and a behavioral model with the dynamic degradation taken into consideration has been implemented for circuit analysis.
Journal ArticleDOI
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Koon Hoo Teo,Yuhao Zhang,Nadim Chowdhury,Shaloo Rakheja,Rui Ma,Qingyun Xie,Eiji Yagyu,Koji Yamanaka,Kexin Li,Tomas Palacios +9 more
TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.
Journal ArticleDOI
Dynamic on -Resistance in GaN-on-Si HEMTs: Origins, Dependencies, and Future Characterization Frameworks
TL;DR: In this paper, the authors used the double-pulse-test (DPT) method to estimate conduction losses in converters with GaN HEMTs and found that the worst-case dc resistance is nearly two times higher than the dc resistance at the same temperature.
Journal ArticleDOI
Active Power Device Selection in High- and Very-High-Frequency Power Converters
TL;DR: In this paper, the authors provide a road map for selecting power devices in soft-switched, megahertz (MHz) frequency power converters, and demonstrate a 100 W, 17 MHz dc-RF inverter using a custom-packaged silicon carbide (SiC) power mosfet s.
References
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Journal ArticleDOI
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
TL;DR: In this article, the vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage (I-V) measurements.
Journal ArticleDOI
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method
Matteo Meneghini,Nicolo Ronchi,Antonio Stocco,Gaudenzio Meneghesso,Umesh K. Mishra,Yi Pei,Enrico Zanoni +6 more
TL;DR: In this article, the role of traps in limiting the maximum gate-drain electric field and the equivalent electron temperature in GaN-based high-electron mobility transistors is investigated.
Journal ArticleDOI
Reliability and parasitic issues in GaN-based power HEMTs: a review
Gaudenzio Meneghesso,Matteo Meneghini,Isabella Rossetto,Davide Bisi,Steve Stoffels,M. Van Hove,Stefaan Decoutere,Enrico Zanoni +7 more
TL;DR: In this paper, the authors review the parasitic mechanisms that affect the performance of GaN-on-Si HEMTs and describe the following relevant processes: (i) trapping of electrons in the buffer, induced by off-state operation; (ii) trapping hot electrons, which is promoted by semi-on state operation; and (iii) trapping, in the gate insulator, favored by the exposure to positive gate bias.
Proceedings ArticleDOI
On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices
Peter Moens,Piet Vanmeerbeek,A. Banerjee,Jia Guo,Charlie Liu,Peter Coppens,Ali Salih,Marnix Tack,Markus Caesar,Michael J. Uren,Martin Kuball,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni +13 more
TL;DR: In this article, a strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented, which in turn results in lower dynamic Ron.
Proceedings ArticleDOI
Product-level reliability of GaN devices
TL;DR: This paper explains how hard-switching can form a fundamental switching transition for power management products and shows that the familiar double-pulse tester is a good hard- Switched qualification test vehicle.