J
James Hone
Researcher at Columbia University
Publications - 702
Citations - 128248
James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.
Papers
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Journal ArticleDOI
Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation.
Xiang Hua,Datong Zhang,Bumho Kim,Dongjea Seo,Dongjea Seo,Kyungnam Kang,Eui-Hyeok Yang,Jiayang Hu,Xianda Chen,Haoran Liang,Kenji Watanabe,Takashi Taniguchi,James Hone,Young Duck Kim,Irving P. Herman +14 more
TL;DR: The best passivation of WS2 at elevated temperature occurs for h-BN-covered samples with flowing N2 (after heating to 873 K), as judged by optical microscopy and photoluminescence intensity after a heating/cooling cycle as discussed by the authors.
Proceedings ArticleDOI
Small-signal model for heterogeneous integrated graphene-silicon photonics
TL;DR: In this paper, a p-i-n junction is modeled by fitting a small-signal model to RF response, and the model extrapolates a maximum bandwidth up to 70 GHz.
Journal ArticleDOI
Front Cover: All‐optical structure assignment of individual single‐walled carbon nanotubes from Rayleigh and Raman scattering measurements (Phys. Status Solidi B 12/2012)
Stéphane Berciaud,Vikram Deshpande,Robert Caldwell,Yuhei Miyauchi,Christophe Voisin,Philip Kim,James Hone,Tony F. Heinz +7 more
Posted Content
Infrared Nonlinear Photomixing Spectroscopy of Graphene Thermal Relaxation
Mohammad M. Jadidi,Ryan J. Suess,Cheng Tan,Xinghan Cai,Kenji Watanabe,Takashi Taniguchi,Andrei B. Sushkov,Martin Mittendorff,James Hone,H. Dennis Drew,Michael S. Fuhrer,Thomas E. Murphy +11 more
TL;DR: In this paper, a photocurrent spectroscopy method was proposed to measure the frequency dependence and nonlinearity of hot-electron cooling in graphene as a function of the carrier concentration and temperature.
Proceedings ArticleDOI
Flexible graphene field-effect transistors for microwave electronics
TL;DR: In this article, the authors demonstrate the potential of flexible field effect transistors (GFETs) and show that the combination of electrical and mechanical advantages of graphene result in gigahertz-frequency operation at strain values up to 2%.